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XINA823DGKR

Texas Instruments

XINA823DGKR by Texas Instruments

XINA823DGKR by Texas Instruments is an instrumentation amplifier with 190uV max input offset voltage, 0.01uA max average bias current, and 1.9MHz nominal bandwidth. Ideal for precision signal amplification in applications requiring high gain accuracy and low noise levels.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,111 parts In-Stock

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5,111

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Digiode

USA . 4,665 parts In-Stock

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4,665

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Nova Conductors

Japan . 500 parts In-Stock

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500

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One Stop Electronics

USA . 842 parts In-Stock

1+ parts

$0.410

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842

$0.410

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$3.684

100+ parts

$3.500

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$3.500

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40

$3.684

$3.500

$3.500

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Parana Technologies

USA . 878 parts In-Stock

1+ parts

$4.185

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$4.627

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878

$4.185

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$4.627

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ChromeModa Solutions

Germany . 1,172 parts In-Stock

1+ parts

$4.702

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$3.856

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1,172

$4.702

$3.856

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IDEA Electronic Components Group

UK . 1,083 parts In-Stock

1+ parts

$4.702

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$4.232

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$4.702

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$4.232

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Corohmni

South Africa . 228 parts In-Stock

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$5.455

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228

$5.455

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Semicontronic

India . 1,097 parts In-Stock

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$6.410

100+ parts

$6.250

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$6.218

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1,097

$6.410

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$6.218

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AZTECH Wire

Italy . 810 parts In-Stock

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$7.903

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810

$7.903

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Ampacity Inc.

Singapore . 1,044 parts In-Stock

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$9.410

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$9.410

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Corphita

USA . 3,748 parts In-Stock

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DigiPath Technology Company

USA . 2,119 parts In-Stock

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$4.239

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Robosynatics

Brazil . 950 parts In-Stock

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950

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Lucentia Tech

USA . 950 parts In-Stock

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Continental Prestige Electronics

USA . 832 parts In-Stock

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Argo Parts USA

USA . 366 parts In-Stock

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366

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Bastille Electronics

Australia . 200 parts In-Stock

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Modulus Dynamics

Lithuania . 46 parts In-Stock

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Overview

Discover the unmatched precision and reliability of the XINA823DGKR by Texas Instruments, a top-of-the-line instrumentation amplifier designed for the most demanding applications. With a focus on quality and performance, Texas Instruments delivers cutting-edge technology in a compact package, offering customers unparalleled value and benefits. Whether you're in the medical, industrial, or automotive industry, this amplifier provides superior signal amplification with minimal distortion, making it the perfect choice for your next project. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for internal components, ensuring long-term reliability.

Maximum Input Offset Voltage: 190 uV

Ensures accurate output signal representation by minimizing input offset errors.

Maximum Average Bias Current (IIB): 0.01 uA

Low bias current helps in maintaining signal integrity by reducing errors in the amplification process.

Surface Mount: YES

Allows for easy and compact integration onto PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 15

Operates within a standard voltage range, making it compatible with various power sources.

Maximum Input Offset Current (IIO): 0.005 uA

Low input offset current minimizes errors in input signal processing, ensuring accurate output amplification.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact and sleek design for easy integration into space-constrained applications.

Maximum Non Linearity: 0.001 %

Provides excellent linearity in signal amplification, avoiding distortion in output signals.

Maximum Supply Voltage Limit: 20 V

Offers protection against overvoltage conditions, ensuring the safety of internal components.

Maximum Operating Temperature: 125 °C

Capable of operating in high-temperature environments without compromising performance.

Maximum Bias Current (IIB) @25°C: 0.008 uA

Low bias current ensures minimal signal distortion and accurate amplification in normal operating conditions.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely cold environments without performance degradation.

Maximum Voltage Gain: 1000

High voltage gain capability for amplifying weak signals with precision and clarity.

Maximum Seated Height: 1.1 mm

Low profile design for fitting into compact spaces and thin electronic devices.

Nominal Bandwidth (3dB): 1.9 MHz

Wide bandwidth for accurate signal amplification across a range of frequencies.

Maximum Negative Supply Voltage Limit: -20 V

Allows for bi-polar power supply operation, offering flexibility in system design.

Minimum Common Mode Reject Ratio: 120 dB

High rejection of common mode signals for maintaining signal integrity in noisy environments.

Terminal Form: GULL WING

SMT terminal form for secure soldering and reliability in PCB assembly.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for accurate amplification of small differential signals, suitable for precision measurement applications.

Maximum Supply Current: 0.3 mA

Low power consumption for energy-efficient operation and reduced heat dissipation.

Nominal Negative Supply Voltage (Vsup): -15 V

Supports bi-polar power supply operation and enables signal amplification for both positive and negative input signals.

Nominal Slow Rate: 1 V/us

Smooth signal amplification with controlled slew rate for accurate signal processing.

Terminal Pitch: 0.65 mm

Fine pitch for compact PCB layout and integration, enabling high-density circuit designs.

Nominal Voltage Gain: 10

Provides moderate amplification for a wide range of input signals while maintaining signal clarity.

Technical Specifications

Instrumentation Amplifiers XINA823DGKR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

1.9 MHz

Nominal Slew Rate:

1 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

190 µV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

8 nA

Maximum Supply Current:

300 μA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.001 %

Maximum Input Offset Current (IIO):

5 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

XINA823DGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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