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ULQ2004AN

Texas Instruments

ULQ2004AN by Texas Instruments

ULQ2004AN by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with a rectangular shape and through-hole terminals.

Median Price

$1.570

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,725 parts In-Stock

1+ parts

$1.570

100+ parts

$0.659

1k+ parts

$0.470

10k+ parts

$0.364

1,725

$1.570

$0.659

$0.470

$0.364

Mouser Electronics

USA . 1,229 parts In-Stock

1+ parts

$1.570

100+ parts

$0.659

1k+ parts

$0.470

10k+ parts

$0.364

1,229

$1.570

$0.659

$0.470

$0.364

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,859 parts In-Stock

1+ parts

$0.598

100+ parts

-

1k+ parts

-

10k+ parts

-

4,859

$0.598

-

-

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Vyrian

USA . 687 parts In-Stock

1+ parts

$0.630

100+ parts

-

1k+ parts

-

10k+ parts

-

687

$0.630

-

-

-

Bristol Electronics

USA . 125 parts In-Stock

1+ parts

-

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125

-

-

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Atlantic Semiconductor

USA . 125 parts In-Stock

1+ parts

-

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125

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EMSNET

USA . 9 parts In-Stock

1+ parts

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 403 parts In-Stock

1+ parts

$0.567

100+ parts

-

1k+ parts

-

10k+ parts

-

403

$0.567

-

-

-

Parana Technologies

USA . 1,835 parts In-Stock

1+ parts

$0.594

100+ parts

-

1k+ parts

$1.676

10k+ parts

-

1,835

$0.594

-

$1.676

-

DigiPath Technology Company

USA . 1,068 parts In-Stock

1+ parts

$0.654

100+ parts

$0.601

1k+ parts

-

10k+ parts

-

1,068

$0.654

$0.601

-

-

ChromeModa Solutions

Germany . 1,698 parts In-Stock

1+ parts

$0.667

100+ parts

$0.547

1k+ parts

-

10k+ parts

-

1,698

$0.667

$0.547

-

-

IDEA Electronic Components Group

UK . 145 parts In-Stock

1+ parts

$0.667

100+ parts

-

1k+ parts

$0.600

10k+ parts

-

145

$0.667

-

$0.600

-

Microchip USA

USA . 1,022 parts In-Stock

1+ parts

$25.240

100+ parts

$24.880

1k+ parts

$24.700

10k+ parts

$24.520

1,022

$25.240

$24.880

$24.700

$24.520

A-Z Elektronik GmbH

Germany . 7,454 parts In-Stock

1+ parts

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7,454

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Kepictronics

USA . 7,280 parts In-Stock

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7,280

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Lixinc

USA . 3,077 parts In-Stock

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3,077

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Perfect Parts

USA . 1,847 parts In-Stock

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1,847

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Overview

Unleash the power of the ULQ2004AN by Texas Instruments, a high-quality Power Bipolar Junction Transistor designed for optimal performance in switching applications. With a complex configuration and 7 elements, this product offers unparalleled reliability and efficiency. Manufactured by Texas Instruments, a trusted name in the industry, customers can expect top-notch quality and innovation. From its NPN polarity to its maximum collector-emitter voltage of 50V, the ULQ2004AN delivers exceptional value and benefits for all your electronic needs. Experience the advantage of superior technology with the ULQ2004AN today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and resistance to impacts, making the transistor suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer fast switching speeds, making them a reliable choice for efficient performance.

Configuration: COMPLEX

The complex configuration indicates that this transistor can handle more intricate circuit designs and provide enhanced functionality compared to simpler configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly turn on and off, making it ideal for controlling power flow in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on circuit boards, facilitating efficient assembly and integration into electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and reliable solder joints, ensuring stable performance and ease of installation in electronic circuits.

No. of Elements: 7

The presence of 7 elements indicates that this transistor can handle complex functions and operate effectively in sophisticated circuit arrangements.

No. of Terminals: 16

With 16 terminals, this transistor offers multiple connection points for interfacing with other components, enabling versatile circuit configurations and functionality.

Package Style (Meter): IN-LINE

The in-line package style allows for efficient space utilization on circuit boards, enabling compact designs and enhanced connectivity within electronic systems.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can safely handle moderate power requirements and voltage levels in electronic circuits.

Transistor Element Material: SILICON

Silicon material in the transistor elements ensures reliable performance, high conductivity, and temperature stability, making it a durable and efficient choice for electronic applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5A indicates that this transistor can efficiently handle medium to low power loads, making it suitable for a wide range of switching applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The terminal finish of nickel/palladium/gold provides corrosion resistance, low contact resistance, and enhanced durability, ensuring reliable connectivity and performance over time.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options, enabling versatile installation and integration of the transistor into diverse electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULQ2004AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-001BB

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULQ2004AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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