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ULQ2801A

STMicroelectronics

ULQ2801A by STMicroelectronics

STMicroelectronics' ULQ2801A is a NPN BJT with 8 banks of Darlington configuration, ideal for switching applications. It features a max VCEsat of 1.6V and max IC of 0.5A, making it suitable for low-power operations. With a min hFE of 1000, this transistor offers high DC current gain for efficient performance in various electronic circuits.

Median Price

$4.260

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,973 parts In-Stock

1+ parts

$4.260

100+ parts

$2.678

1k+ parts

$2.461

10k+ parts

$2.293

1,973

$4.260

$2.678

$2.461

$2.293

Mouser Electronics

USA . 754 parts In-Stock

1+ parts

$4.260

100+ parts

$2.550

1k+ parts

$2.400

10k+ parts

$2.240

754

$4.260

$2.550

$2.400

$2.240

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.463

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$1.463

-

-

-

Digiode

USA . 1,965 parts In-Stock

1+ parts

$2.603

100+ parts

-

1k+ parts

-

10k+ parts

-

1,965

$2.603

-

-

-

Vyrian

USA . 6,755 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,755

-

-

-

-

Anansix

USA . 319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

319

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,692 parts In-Stock

1+ parts

$0.672

100+ parts

-

1k+ parts

$0.604

10k+ parts

-

1,692

$0.672

-

$0.604

-

MKK Technologies

India . 1,162 parts In-Stock

1+ parts

$1.263

100+ parts

-

1k+ parts

-

10k+ parts

-

1,162

$1.263

-

-

-

DigiPath Technology Company

USA . 1,162 parts In-Stock

1+ parts

$1.263

100+ parts

-

1k+ parts

-

10k+ parts

-

1,162

$1.263

-

-

-

Continental Prestige Electronics

USA . 4,105 parts In-Stock

1+ parts

$1.463

100+ parts

-

1k+ parts

-

10k+ parts

$1.433

4,105

$1.463

-

-

$1.433

Argo Parts USA

USA . 1,047 parts In-Stock

1+ parts

$1.463

100+ parts

-

1k+ parts

-

10k+ parts

-

1,047

$1.463

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$1.463

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$1.463

-

-

-

Ampacity Inc.

Singapore . 1,281 parts In-Stock

1+ parts

$1.980

100+ parts

-

1k+ parts

-

10k+ parts

-

1,281

$1.980

-

-

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Corphita

USA . 1,150 parts In-Stock

1+ parts

$2.466

100+ parts

-

1k+ parts

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10k+ parts

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1,150

$2.466

-

-

-

Microchip USA

USA . 7,422 parts In-Stock

1+ parts

$19.695

100+ parts

-

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10k+ parts

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7,422

$19.695

-

-

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A-Z Elektronik GmbH

Germany . 4,544 parts In-Stock

1+ parts

-

100+ parts

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4,544

-

-

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-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,000

-

-

-

-

RC Electronics

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

$9.470

1k+ parts

$8.590

10k+ parts

$8.290

2,800

-

$9.470

$8.590

$8.290

Perfect Parts

USA . 2,486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,486

-

-

-

-

iodParts Technologies Inc.

India . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

Parana Technologies

USA . 1,394 parts In-Stock

1+ parts

-

100+ parts

$0.803

1k+ parts

-

10k+ parts

-

1,394

-

$0.803

-

-

Overview

Upgrade your power management capabilities with the ULQ2801A from STMicroelectronics. Designed to deliver high-quality performance, this power bipolar junction transistor offers exceptional reliability and efficiency in switching applications. With its innovative design featuring 8 banks of Darlington transistors, built-in diodes, and resistors, the ULQ2801A provides unmatched value to customers seeking superior power control solutions. Trust STMicroelectronics, a leading manufacturer known for their cutting-edge technologies, to provide you with the quality and performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight, durable, and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration and built-in diode and resistor allow for high gain and reliability in various switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficiency and precision in controlling electrical signals.

Maximum VCEsat: 1.6 V

With a low VCEsat value, this transistor minimizes power loss and improves overall performance in switching operations.

Package Shape: RECTANGULAR

The rectangular shape offers easy installation and space-saving benefits in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Elements: 8

With 8 elements in one package, this product offers compact integration and cost-effectiveness in multi-transistor circuits.

No. of Terminals: 18

The high number of terminals allows for versatile connectivity options, enhancing flexibility in circuit design.

Package Style (Meter): IN-LINE

The in-line package style enables organized and efficient mounting on PCBs or breadboards.

Minimum DC Current Gain (hFE): 1000

A high minimum DC current gain ensures stable and consistent amplification performance in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high VCEO rating makes this transistor suitable for handling moderate voltage levels in electronic circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and temperature stability for long-term operation.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can effectively handle moderate power loads.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: DUAL

Dual terminal positioning offers flexibility in component orientation and ease of soldering, enhancing overall assembly efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULQ2801A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T18

JESD-609 Code:

e3

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULQ2801A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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