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ULQ2805A

STMicroelectronics

ULQ2805A by STMicroelectronics

STMicroelectronics' ULQ2805A is a NPN BJT with 8 banks, ideal for switching applications. Featuring a max VCEsat of 1.6V and hFE of 1000, it has a max IC of 0.5A and VCE of 50V. The package style is in-line with matte tin finish, making it suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,664 parts In-Stock

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4,664

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Digiode

USA . 2,284 parts In-Stock

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2,284

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Anansix

USA . 1,921 parts In-Stock

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1,921

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 95 parts In-Stock

1+ parts

$0.626

100+ parts

-

1k+ parts

$0.563

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95

$0.626

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$0.563

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MKK Technologies

India . 182 parts In-Stock

1+ parts

$1.176

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182

$1.176

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DigiPath Technology Company

USA . 182 parts In-Stock

1+ parts

$1.176

100+ parts

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182

$1.176

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Corphita

USA . 3,394 parts In-Stock

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3,394

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Parana Technologies

USA . 261 parts In-Stock

1+ parts

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100+ parts

$0.748

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261

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$0.748

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Overview

Enhance your electronic projects with the ULQ2805A by STMicroelectronics, a high-quality Power BJT that offers unmatched reliability and performance. Manufactured by industry leader STMicroelectronics, this transistor boasts 8 banks of Darlington configuration with built-in diode and resistor, making it ideal for switching applications. With a low VCEsat of 1.6V and a maximum collector current of 0.5A, this transistor ensures efficient power management. Upgrade your designs today with the ULQ2805A and experience superior functionality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

The NPN type allows for easy integration with other NPN components in a circuit, providing compatibility and versatility.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and can help reduce overall component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in these types of circuits.

Maximum VCEsat: 1.6 V

The low VCEsat value indicates minimal power loss and high efficiency during operation, making it ideal for energy-conscious designs.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on circuit boards, saving space and simplifying assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminals enable secure connections and easy soldering, ensuring a reliable electrical connection in a circuit.

No. of Elements: 8

Having 8 elements in a single package offers convenience and efficiency in multi-transistor circuit designs, saving space and reducing complexity.

No. of Terminals: 18

The 18 terminals provide ample connection points for various external components, allowing for flexibility in circuit configurations.

Package Style (Meter): IN-LINE

The in-line package style offers a streamlined and compact form factor, making it easy to integrate into tight spaces or crowded PCB layouts.

Minimum DC Current Gain (hFE): 1000

With a high hFE value, this transistor provides consistent and stable amplification of the input signal, ensuring reliable performance in signal processing applications.

Maximum Collector-Emitter Voltage: 50 V

The 50V maximum voltage rating allows for safe operation in circuits with higher voltage requirements, providing a wider range of applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and durability, making them a popular choice for a wide range of electronic applications.

Maximum Collector Current (IC): 0.5 A

The 0.5A maximum collector current rating ensures reliable operation at moderate power levels, making it suitable for a variety of low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin finish provides a stable and reliable surface for soldering, ensuring strong and durable connections in a circuit.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and easy integration into various circuit layouts, offering flexibility in design and assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULQ2805A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T18

JESD-609 Code:

e3

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULQ2805A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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