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UCC5871QDWJRQ1

Texas Instruments

UCC5871QDWJRQ1 by Texas Instruments

UCC5871QDWJRQ1 by Texas Instruments is a MOSFET gate driver with 36 terminals, suitable for applications requiring high output current up to 30A. It operates at a voltage range of 3-30V and features a fast turn-on/off time of 0.15us, making it ideal for automotive electronics due to its AEC-Q100 screening level.

Median Price

$14.910

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 3,178 parts In-Stock

1+ parts

$11.040

100+ parts

$9.000

1k+ parts

$6.000

10k+ parts

-

3,178

$11.040

$9.000

$6.000

-

Mouser Electronics

USA . 756 parts In-Stock

1+ parts

$18.780

100+ parts

$13.030

1k+ parts

$11.720

10k+ parts

-

756

$18.780

$13.030

$11.720

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,491 parts In-Stock

1+ parts

$10.488

100+ parts

-

1k+ parts

-

10k+ parts

-

4,491

$10.488

-

-

-

Vyrian

USA . 4,168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,168

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,860 parts In-Stock

1+ parts

$6.840

100+ parts

-

1k+ parts

-

10k+ parts

-

1,860

$6.840

-

-

-

Semicontronic

India . 1,725 parts In-Stock

1+ parts

$6.840

100+ parts

$6.669

1k+ parts

$6.635

10k+ parts

-

1,725

$6.840

$6.669

$6.635

-

Corohmni

South Africa . 171 parts In-Stock

1+ parts

$8.050

100+ parts

-

1k+ parts

-

10k+ parts

-

171

$8.050

-

-

-

Corphita

USA . 1,758 parts In-Stock

1+ parts

$9.936

100+ parts

-

1k+ parts

-

10k+ parts

-

1,758

$9.936

-

-

-

Overview

Experience unmatched quality and reliability with the UCC5871QDWJRQ1 MOSFET Gate Driver by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers cutting-edge technology that exceeds expectations. This versatile component is perfect for a wide range of applications, providing seamless performance and superior protection for your electronic systems. Trust in Texas Instruments to bring you the best in innovation and efficiency with the UCC5871QDWJRQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components, making this product reliable for long-term use.

Maximum Supply Voltage: 5.5 V

The maximum supply voltage of 5.5 V allows for safe and efficient operation within the specified voltage range, ensuring the stability of the device.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that the product meets the stringent automotive industry standards for quality and reliability, making it a suitable choice for automotive applications.

Maximum Output Current: 30 A

With a maximum output current of 30 A, this MOSFET gate driver is capable of driving high-power MOSFETs effectively, making it ideal for applications that require high current handling capacity.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows the device to withstand elevated temperatures without compromising performance, making it suitable for harsh environments.

Technical Specifications

MOSFET Gate Drivers UCC5871QDWJRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G36

JESD-609 Code:

e4

Length:

12.83 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

30 A

Nominal Output Peak Current Limit:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP36,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

3.55 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Nominal Supply Voltage-1:

20 V

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Turn-off Time:

.15 us

Turn-on Time:

.15 us

Width:

7.5 mm

Trade Compliance

UCC5871QDWJRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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