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UCC27210DPRR

Texas Instruments

UCC27210DPRR by Texas Instruments

UCC27210DPRR by Texas Instruments is a MOSFET gate driver with 2 channels, 12V power supplies, and 17V max supply voltage. It is used in automotive applications due to its small outline package style, high side driver feature, and true output polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,470 parts In-Stock

1+ parts

-

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1k+ parts

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9,470

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Digiode

USA . 4,222 parts In-Stock

1+ parts

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4,222

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 309 parts In-Stock

1+ parts

$7.503

100+ parts

-

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309

$7.503

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Microchip USA

USA . 2,781 parts In-Stock

1+ parts

$7.820

100+ parts

$7.770

1k+ parts

$7.750

10k+ parts

$7.730

2,781

$7.820

$7.770

$7.750

$7.730

Parana Technologies

USA . 1,580 parts In-Stock

1+ parts

$11.886

100+ parts

-

1k+ parts

$12.281

10k+ parts

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1,580

$11.886

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$12.281

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DigiPath Technology Company

USA . 813 parts In-Stock

1+ parts

$13.088

100+ parts

$12.041

1k+ parts

-

10k+ parts

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813

$13.088

$12.041

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ChromeModa Solutions

Germany . 1,396 parts In-Stock

1+ parts

$13.355

100+ parts

$10.951

1k+ parts

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10k+ parts

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1,396

$13.355

$10.951

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IDEA Electronic Components Group

UK . 869 parts In-Stock

1+ parts

$13.355

100+ parts

$12.687

1k+ parts

$12.020

10k+ parts

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869

$13.355

$12.687

$12.020

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One Stop Electronics

USA . 327 parts In-Stock

1+ parts

$18.500

100+ parts

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327

$18.500

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Corphita

USA . 354 parts In-Stock

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354

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Overview

Enhance your electronic designs with the UCC27210DPRR by Texas Instruments, a top-tier manufacturer known for delivering innovative solutions in the field of MOSFET Gate Drivers. This high-quality driver offers reliable performance, precise control, and efficient power management, making it ideal for a wide range of applications. From automotive systems to industrial equipment, this versatile component provides exceptional value, ensuring your projects run smoothly and efficiently. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and resistance to external elements, making this product ideal for harsh environments.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on the PCB.

Maximum Supply Voltage: 17 V

With a high maximum supply voltage of 17V, this gate driver can support a wide range of applications.

Package Shape: SQUARE

The square package shape provides a compact design, ideal for applications where space is limited.

Power Supplies (V): 12

Operating at a nominal supply voltage of 12V, this gate driver is suitable for many common power supply configurations.

No. of Terminals: 10

With 10 terminals, this gate driver offers flexibility in connection options and compatibility with various setups.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature of 140°C ensures reliable performance in extreme temperature conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Maximum Output Current: 4 A

With a maximum output current of 4A, this gate driver can drive high-power MOSFETs effectively.

No. of Channels: 2

Having 2 channels allows for driving multiple MOSFETs simultaneously, enabling more complex circuit configurations.

Technical Specifications

MOSFET Gate Drivers UCC27210DPRR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

4 A

Nominal Output Peak Current Limit:

4 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC10,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

5.2 mA

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

8 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.4 us

Turn-on Time:

.6 us

Width:

4 mm

Trade Compliance

UCC27210DPRR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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