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TWL6030B1AECMR

Texas Instruments

TWL6030B1AECMR by Texas Instruments

TWL6030B1AECMR by Texas Instruments is a Power Management IC with 187 terminals, operating b/w -40 to 85°C. It has a nominal voltage of 3.8V and supports adjustable threshold with a package style of GRID ARRAY for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,937 parts In-Stock

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Digiode

USA . 292 parts In-Stock

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292

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Ampacity Inc.

Singapore . 431 parts In-Stock

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$2.500

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431

$2.500

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One Stop Electronics

USA . 1,069 parts In-Stock

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$4.500

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1,069

$4.500

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AZTECH Wire

Italy . 390 parts In-Stock

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$6.383

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390

$6.383

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Semicontronic

India . 931 parts In-Stock

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$7.500

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$7.312

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$7.275

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931

$7.500

$7.312

$7.275

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Parana Technologies

USA . 830 parts In-Stock

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$11.307

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$11.740

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830

$11.307

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$11.740

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DigiPath Technology Company

USA . 1,647 parts In-Stock

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$12.450

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$12.450

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ChromeModa Solutions

Germany . 4,270 parts In-Stock

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$12.704

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$10.417

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IDEA Electronic Components Group

UK . 2,232 parts In-Stock

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$12.704

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$12.069

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$11.434

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2,232

$12.704

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$11.434

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Corphita

USA . 1,637 parts In-Stock

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Corohmni

South Africa . 264 parts In-Stock

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Overview

Unleash the power of efficient energy management with the TWL6030B1AECMR by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled reliability and performance. Perfect for a wide range of applications, this product ensures optimal power distribution and regulation, maximizing the efficiency of your electronic devices. Say goodbye to power fluctuations and hello to seamless operation with this innovative solution. Upgrade to Texas Instruments today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the product, making it resistant to damage and suitable for various applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort in the assembly process.

Nominal Supply Voltage (Vsup): 3.8 V

Offers a stable and consistent supply voltage for power management, ensuring proper functionality of connected devices.

No. of Terminals: 187

Provides a high number of connection points for versatile use and compatibility with different devices or systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures without sacrificing performance, ideal for industrial or challenging environments.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures, making it suitable for a wide range of applications in various conditions.

Terminal Position: BOTTOM

Facilitates efficient and compact design layout on circuit boards, optimizing space utilization and overall performance.

Maximum Seated Height: 1 mm

Low profile design allows for space-saving integration in compact devices or applications, promoting flexibility and versatility.

Minimum Supply Voltage (Vsup): 2.5 V

Provides a reliable power source even at low voltage levels, ensuring consistent performance across different power supply scenarios.

Temperature Grade: INDUSTRIAL

Designed to meet industrial standards for temperature resistance and reliability, making it suitable for demanding industrial applications.

Adjustable Threshold: YES

Allows for customization of threshold settings based on specific requirements, offering greater flexibility and control over power management functions.

Technical Specifications

Power Management ICs TWL6030B1AECMR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PBGA-B187

Length:

7 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

187

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

4.8 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

3.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Width (mm):

7 mm

Trade Compliance

TWL6030B1AECMR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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