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TPS2828DBVRG4

Texas Instruments

TPS2828DBVRG4 by Texas Instruments

TPS2828DBVRG4 by Texas Instruments is a MOSFET Gate Driver with 14V max supply voltage, 2A max output current, and -40 to 125°C operating temperature range. Ideal for automotive applications due to its small outline package and inverted output polarity.

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2

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1k+

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Vyrian

USA . 2,957 parts In-Stock

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Digiode

USA . 778 parts In-Stock

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Parana Technologies

USA . 2,195 parts In-Stock

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$3.411

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$3.935

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$3.935

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DigiPath Technology Company

USA . 2,301 parts In-Stock

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$3.756

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ChromeModa Solutions

Germany . 4,717 parts In-Stock

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$3.833

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$3.143

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IDEA Electronic Components Group

UK . 1,439 parts In-Stock

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$3.833

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$3.450

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One Stop Electronics

USA . 1,621 parts In-Stock

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$9.500

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AZTECH Wire

Italy . 288 parts In-Stock

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$15.235

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A-Z Elektronik GmbH

Germany . 14,832 parts In-Stock

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Kepictronics

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Perfect Parts

USA . 5,600 parts In-Stock

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Microchip USA

USA . 3,935 parts In-Stock

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Corphita

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Metaverse IC Inc.

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Overview

Unlock the power of your MOSFET applications with the TPS2828DBVRG4 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in every product. This small outline gate driver boasts a wide operating temperature range, inverted output polarity, and high side driver capability, making it ideal for automotive applications. With a nominal supply voltage of 10V and maximum output current of 2A, this BICMOS technology driver offers unparalleled performance and efficiency. Upgrade your designs today with the TPS2828DBVRG4 and experience the difference Texas Instruments can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into electronic circuit boards.

Maximum Supply Voltage: 14 V

The high maximum supply voltage of 14 V allows for flexibility in power supply options while ensuring safe operation.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and easy to handle during assembly or mounting.

Power Supplies (V): 10

The available power supply voltage of 10 V is suitable for driving MOSFETs in various voltage ranges.

No. of Terminals: 5

Having 5 terminals provides necessary connections for proper interfacing with external components.

Minimum Supply Voltage: 4 V

The low minimum supply voltage of 4 V allows for operation in low-power environments or battery-powered applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this driver can perform reliably in harsh operating conditions.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration allows for both sourcing and sinking current capabilities, enhancing versatility in driving MOSFETs.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C enables operation in cold environments without sacrificing performance.

Technical Specifications

MOSFET Gate Drivers TPS2828DBVRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.015 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Maximum Supply Voltage-1:

14 V

Minimum Supply Voltage-1:

4 V

Nominal Supply Voltage-1:

10 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

1.65 mm

Trade Compliance

TPS2828DBVRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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