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TPS2216DBRG4

Texas Instruments

TPS2216DBRG4 by Texas Instruments

TPS2216DBRG4 by Texas Instruments is a Power Management IC with 2 functions, operating at -40 to 125 °C. It supports supply voltages of 2.7V to 5V and has a small outline package style for automotive applications. With BICMOS technology, it offers 3 channels in a compact form factor suitable for power supply support circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,653 parts In-Stock

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3,653

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Digiode

USA . 1,615 parts In-Stock

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1,615

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Distributors (Availability)

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Semicontronic

India . 949 parts In-Stock

1+ parts

$3.500

100+ parts

$3.412

1k+ parts

$3.395

10k+ parts

-

949

$3.500

$3.412

$3.395

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Parana Technologies

USA . 1,164 parts In-Stock

1+ parts

$4.496

100+ parts

-

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$4.937

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1,164

$4.496

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$4.937

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Ampacity Inc.

Singapore . 1,189 parts In-Stock

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$4.500

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$4.500

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IDEA Electronic Components Group

UK . 1,224 parts In-Stock

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$5.052

100+ parts

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$4.547

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1,224

$5.052

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$4.547

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ChromeModa Solutions

Germany . 1,082 parts In-Stock

1+ parts

$5.052

100+ parts

$4.143

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1,082

$5.052

$4.143

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One Stop Electronics

USA . 1,031 parts In-Stock

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$5.500

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1,031

$5.500

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AZTECH Wire

Italy . 806 parts In-Stock

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$9.945

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806

$9.945

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A-Z Elektronik GmbH

Germany . 6,842 parts In-Stock

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Microchip USA

USA . 463 parts In-Stock

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Corohmni

South Africa . 263 parts In-Stock

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Kepictronics

USA . 231 parts In-Stock

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Corphita

USA . 128 parts In-Stock

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128

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DigiPath Technology Company

USA . 14 parts In-Stock

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$4.555

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14

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$4.555

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Overview

Enhance the power management of your devices with the TPS2216DBRG4 by Texas Instruments. As a leader in Power Management ICs, Texas Instruments delivers quality products that offer reliable performance and efficiency. This compact and versatile device provides dual functions, making it ideal for a wide range of applications. With a nominal supply voltage of 3.3V and support for multiple power supplies, the TPS2216DBRG4 ensures stable and precise power delivery. Trust Texas Instruments to elevate your power management solutions with this innovative and high-quality product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good durability and insulation properties, making the product reliable and long-lasting.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

No. of Functions: 2

Having multiple functions in a single package helps save space on the circuit board and simplifies the overall design of the system.

Nominal Supply Voltage (Vsup): 3.3 V

The nominal supply voltage of 3.3 V is a common and widely used standard in many electronic systems, ensuring compatibility with a variety of applications.

No. of Terminals: 30

Having a higher number of terminals allows for more connections, enabling greater flexibility in system design and integration.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance even in demanding environmental conditions.

Technology: BICMOS

Utilizing BiCMOS technology combines the advantages of both bipolar and CMOS technologies, offering high-speed performance and low power consumption.

Technical Specifications

Power Management ICs TPS2216DBRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 5V AND 12V SUPPLY

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G30

JESD-609 Code:

e4

Length:

10.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

3

No. of Functions:

2

No. of Terminals:

30

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP30,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

5.3 mm

Trade Compliance

TPS2216DBRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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