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TMS3473BDWR

Texas Instruments

TMS3473BDWR by Texas Instruments

TMS3473BDWR by Texas Instruments is a MOSFET gate driver with 20 terminals, operating temperature range of -20 to 45°C. It has a max supply voltage of 4.4V and min supply voltage of -9.7V, suitable for CCD driver interface applications in commercial-grade electronics due to its compact rectangular package design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,999 parts In-Stock

1+ parts

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4,999

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Digiode

USA . 4,001 parts In-Stock

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4,001

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,312 parts In-Stock

1+ parts

$11.375

100+ parts

-

1k+ parts

$11.799

10k+ parts

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1,312

$11.375

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$11.799

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DigiPath Technology Company

USA . 1,185 parts In-Stock

1+ parts

$12.525

100+ parts

$11.523

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1,185

$12.525

$11.523

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ChromeModa Solutions

Germany . 1,040 parts In-Stock

1+ parts

$12.781

100+ parts

$10.480

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1,040

$12.781

$10.480

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IDEA Electronic Components Group

UK . 928 parts In-Stock

1+ parts

$12.781

100+ parts

$12.142

1k+ parts

$11.503

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-

928

$12.781

$12.142

$11.503

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AZTECH Wire

Italy . 435 parts In-Stock

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$14.043

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435

$14.043

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One Stop Electronics

USA . 668 parts In-Stock

1+ parts

$21.500

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668

$21.500

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Corphita

USA . 1,329 parts In-Stock

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1,329

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Overview

Enhance the performance of your electronics with the TMS3473BDWR by Texas Instruments, a top-tier manufacturer known for quality and reliability. As a leading player in MOSFET Gate Drivers, this product boasts a wide range of applications and is designed to deliver unmatched precision and efficiency. With its advanced technology and durable construction, the TMS3473BDWR offers exceptional value, ensuring that your devices operate flawlessly under varying conditions. Upgrade your electronics with this powerhouse component and experience enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Surface Mount: YES

The surface mount feature allows for easy and compact installation on circuit boards, saving space and making assembly more efficient.

Maximum Supply Voltage: 4.4 V

The high maximum supply voltage allows for reliable operation with various power sources, providing flexibility in usage.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to integrate into circuit designs and ensures compatibility with standard mounting techniques.

No. of Terminals: 20

Having a higher number of terminals provides more connectivity options and allows for greater customization in circuit configurations.

Minimum Operating Temperature: -20 °C

The wide minimum operating temperature range ensures reliable performance in a variety of environments, including those with extreme temperatures.

Maximum Seated Height: 2.65 mm

The low seated height allows for a compact design and facilitates integration into devices with limited space.

Technical Specifications

MOSFET Gate Drivers TMS3473BDWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

Length:

12.8 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

45 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

4.4 V

Minimum Supply Voltage:

0 V

Nominal Supply Voltage:

1 V

Maximum Supply Voltage-1:

-11.1 V

Minimum Supply Voltage-1:

-9.7 V

Nominal Supply Voltage-1:

-10 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

TMS3473BDWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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