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TMS3473B

Texas Instruments

TMS3473B by Texas Instruments

TMS3473B by Texas Instruments is a MOSFET Gate Driver with 20 terminals, operating voltage range of -9.7V to 4.4V, and small outline package style. It is designed for CCD driver interface applications, offering commercial temperature grade and CMOS technology for reliable performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,268 parts In-Stock

1+ parts

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8,268

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Digiode

USA . 1,269 parts In-Stock

1+ parts

-

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1,269

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 254 parts In-Stock

1+ parts

$9.819

100+ parts

-

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254

$9.819

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Parana Technologies

USA . 1,136 parts In-Stock

1+ parts

$10.450

100+ parts

-

1k+ parts

$10.964

10k+ parts

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1,136

$10.450

-

$10.964

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DigiPath Technology Company

USA . 123 parts In-Stock

1+ parts

$11.507

100+ parts

$10.587

1k+ parts

-

10k+ parts

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123

$11.507

$10.587

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ChromeModa Solutions

Germany . 6,961 parts In-Stock

1+ parts

$11.742

100+ parts

$9.628

1k+ parts

-

10k+ parts

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6,961

$11.742

$9.628

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IDEA Electronic Components Group

UK . 586 parts In-Stock

1+ parts

$11.742

100+ parts

$11.155

1k+ parts

$10.568

10k+ parts

-

586

$11.742

$11.155

$10.568

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One Stop Electronics

USA . 281 parts In-Stock

1+ parts

$44.500

100+ parts

-

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281

$44.500

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Corphita

USA . 3,970 parts In-Stock

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3,970

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Perfect Parts

USA . 560 parts In-Stock

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560

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Overview

Experience the superior quality and reliability of the TMS3473B MOSFET Gate Driver by Texas Instruments, a trusted leader in semiconductor manufacturing. Ideal for a wide range of applications, this compact device offers unparalleled value and benefits to customers seeking high-performance solutions. With advanced technology and a durable package body material, the TMS3473B provides exceptional performance in demanding environments. Trust Texas Instruments to deliver cutting-edge products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and resistance to heat, making the product suitable for various environments.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and making installation efficient.

Maximum Supply Voltage: 4.4 V

With a high maximum supply voltage, this gate driver can handle various power supply levels effectively.

No. of Terminals: 20

Having a sufficient number of terminals allows for versatile connections and compatibility with different systems.

Maximum Operating Temperature: 45 °C

The high maximum operating temperature ensures the reliability and stability of the gate driver even under demanding conditions.

Technical Specifications

MOSFET Gate Drivers TMS3473B attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

Length:

12.825 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

45 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Other Interface ICs

Maximum Supply Voltage:

4.4 V

Minimum Supply Voltage:

0 V

Nominal Supply Voltage:

1 V

Maximum Supply Voltage-1:

-11.1 V

Minimum Supply Voltage-1:

-9.7 V

Nominal Supply Voltage-1:

-10 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.52 mm

Trade Compliance

TMS3473B Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-420-3984, 5962014203984

NIIN

014203984

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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