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TMS3472ADWR

Texas Instruments

TMS3472ADWR by Texas Instruments

TMS3472ADWR by Texas Instruments is a MOSFET Gate Driver with 20 terminals, operating temperature range of -20 to 45°C. It has a supply voltage range of -10.4 to 2.2 V and is designed for CCD driver applications in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,015 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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8,015

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Digiode

USA . 849 parts In-Stock

1+ parts

-

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-

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849

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,294 parts In-Stock

1+ parts

$1.500

100+ parts

-

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1,294

$1.500

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Parana Technologies

USA . 1,994 parts In-Stock

1+ parts

$8.715

100+ parts

-

1k+ parts

$9.397

10k+ parts

-

1,994

$8.715

-

$9.397

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AZTECH Wire

Italy . 584 parts In-Stock

1+ parts

$9.399

100+ parts

-

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584

$9.399

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DigiPath Technology Company

USA . 674 parts In-Stock

1+ parts

$9.596

100+ parts

$8.828

1k+ parts

-

10k+ parts

-

674

$9.596

$8.828

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-

ChromeModa Solutions

Germany . 862 parts In-Stock

1+ parts

$9.792

100+ parts

$8.029

1k+ parts

-

10k+ parts

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862

$9.792

$8.029

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IDEA Electronic Components Group

UK . 460 parts In-Stock

1+ parts

$9.792

100+ parts

$9.302

1k+ parts

$8.813

10k+ parts

-

460

$9.792

$9.302

$8.813

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Corphita

USA . 2,270 parts In-Stock

1+ parts

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2,270

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Overview

Enhance the performance of your electronic devices with the TMS3472ADWR MOSFET Gate Driver by Texas Instruments. Known for its top-quality manufacturing and innovative technology, this product offers reliability and efficiency in a compact package. Ideal for applications requiring precise voltage control, this gate driver ensures optimal performance while maximizing energy efficiency. Trust Texas Instruments to deliver cutting-edge solutions that meet your needs and exceed your expectations. Experience the difference with the TMS3472ADWR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, making it easier to handle and less prone to damage during installation or transportation.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing processes.

Maximum Supply Voltage: 2.2 V

The high maximum supply voltage of 2.2V provides flexibility and compatibility with a variety of power sources.

Package Shape: RECTANGULAR

The rectangular package shape offers simplicity and compatibility for usage in standard PCB designs.

Maximum Seated Height: 2.65 mm

The low maximum seated height makes this product suitable for applications where space is limited, allowing for compact and efficient designs.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance within standard operating conditions, making it suitable for a wide range of commercial applications.

Technology: CMOS

The CMOS technology used in this product offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems, making it an efficient choice for gate drivers.

Nominal Supply Voltage: 1 V

The nominal supply voltage of 1V provides stable and consistent power delivery, ensuring the proper functioning of the gate driver.

Interface IC Type: CCD DRIVER

The CCD driver interface IC type enhances the product's performance in driving MOSFET gates efficiently and accurately, making it a reliable choice for various applications.

Technical Specifications

MOSFET Gate Drivers TMS3472ADWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

Length:

12.825 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

45 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

2.2 V

Minimum Supply Voltage:

0 V

Nominal Supply Voltage:

1 V

Maximum Supply Voltage-1:

-11.1 V

Minimum Supply Voltage-1:

-9.7 V

Nominal Supply Voltage-1:

-10.4 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.52 mm

Trade Compliance

TMS3472ADWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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