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TMS3472A

Texas Instruments

TMS3472A by Texas Instruments

TMS3472A by Texas Instruments is a MOSFET Gate Driver with 20 terminals, operating at -20 to 45°C. It has a supply voltage range of -11.1V to 2.2V and comes in a small outline package suitable for CCD driver applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,802 parts In-Stock

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3,802

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Digiode

USA . 3,438 parts In-Stock

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3,438

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 184 parts In-Stock

1+ parts

$5.500

100+ parts

-

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184

$5.500

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Parana Technologies

USA . 1,680 parts In-Stock

1+ parts

$5.981

100+ parts

-

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$6.757

10k+ parts

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1,680

$5.981

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$6.757

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DigiPath Technology Company

USA . 1,640 parts In-Stock

1+ parts

$6.586

100+ parts

$6.059

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1,640

$6.586

$6.059

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ChromeModa Solutions

Germany . 3,648 parts In-Stock

1+ parts

$6.720

100+ parts

$5.510

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3,648

$6.720

$5.510

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IDEA Electronic Components Group

UK . 1,091 parts In-Stock

1+ parts

$6.720

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$6.048

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1,091

$6.720

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$6.048

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AZTECH Wire

Italy . 453 parts In-Stock

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$15.625

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453

$15.625

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Corphita

USA . 954 parts In-Stock

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954

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Overview

Enhance the performance of your electronic devices with the TMS3472A MOSFET Gate Driver from Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions that meet the demands of various applications. This compact and efficient gate driver ensures seamless operation while offering a wide range of benefits to customers. From improved efficiency to enhanced reliability, the TMS3472A is the perfect choice for your next project. Upgrade your designs and experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable applications.

Surface Mount: YES

Being surface mountable allows for easy and compact integration onto PCBs, saving space and simplifying assembly.

Maximum Supply Voltage: 2.2 V

The high maximum supply voltage ensures compatibility with a wide range of power sources, increasing flexibility in design.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy mounting and integration.

No. of Terminals: 20

With a higher number of terminals, this MOSFET gate driver can support more complex circuit designs and connections.

Maximum Operating Temperature: 45 °C

The high maximum operating temperature ensures reliability in various environmental conditions, making it suitable for industrial applications.

Technology: CMOS

The CMOS technology used in this gate driver results in low power consumption and high noise immunity, enhancing overall performance.

Nominal Supply Voltage: 1 V

The nominal supply voltage of 1V provides efficient power usage and compatibility with standard voltage levels.

Technical Specifications

MOSFET Gate Drivers TMS3472A attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

Length:

12.825 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

45 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

2.2 V

Minimum Supply Voltage:

0 V

Nominal Supply Voltage:

1 V

Maximum Supply Voltage-1:

-11.1 V

Minimum Supply Voltage-1:

-9.7 V

Nominal Supply Voltage-1:

-10.4 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.52 mm

Trade Compliance

TMS3472A Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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