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TMS320DM648CUT9

Texas Instruments

TMS320DM648CUT9 by Texas Instruments

TMS320DM648CUT9 by Texas Instruments is a 32-bit DSP with integrated cache, 900 MHz clock frequency, and 64 DMA channels. Ideal for digital signal processing applications requiring high-speed data processing and low power consumption. Package style: grid array, technology: CMOS, terminal finish: tin silver copper.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 7,283 parts In-Stock

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Digiode

USA . 818 parts In-Stock

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Chip Stock

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AZTECH Wire

Italy . 535 parts In-Stock

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$8.864

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$26.667

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$24.267

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$21.867

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One Stop Electronics

USA . 888 parts In-Stock

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Corohmni

South Africa . 2,222 parts In-Stock

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Parana Technologies

USA . 1,002 parts In-Stock

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DigiPath Technology Company

USA . 2,055 parts In-Stock

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ChromeModa Solutions

Germany . 5,201 parts In-Stock

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IDEA Electronic Components Group

UK . 756 parts In-Stock

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Corphita

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Component Stockers USA

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Overview

Experience unparalleled performance and efficiency with the TMS320DM648CUT9 by Texas Instruments, a top-tier manufacturer in the industry. This cutting-edge Digital Signal Processor (DSP) is designed to optimize a wide range of applications with its integrated cache and high clock frequency of 900 MHz. With 64 DMA channels and low power mode, this product offers exceptional value and benefits to customers seeking reliable and versatile solutions. Trust Texas Instruments for quality and innovation that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good protection and durability for the product, ensuring long-lasting performance.

Integrated Cache: YES

Integrated cache helps in improving the performance of the DSP by reducing access times to frequently used data.

Maximum Supply Voltage: 1.26 V

Having a maximum supply voltage of 1.26 V makes this DSP suitable for low power applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving space and reducing production costs.

On Chip Data RAM Width: 8

Having an on-chip data RAM width of 8 enhances data processing capabilities and speeds up operations.

Address Bus Width: 14

A wider address bus width of 14 allows for efficient memory addressing and access to larger memory sizes.

Bit Size: 32

With a bit size of 32, this DSP is capable of processing and manipulating data in larger chunks, improving overall performance.

Power Supplies (V): 1.2,1.8,3.3

Support for multiple power supply voltages (1.2V, 1.8V, 3.3V) offers flexibility in design and compatibility with various systems.

No. of Terminals: 520

Having 520 terminals allows for connecting to a wide range of external components and peripherals, expanding the functionality of the product.

Package Style (Meter): GRID ARRAY

A grid array package style provides better thermal performance and reliability during operation.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM648CUT9 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

14

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

900 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B520

JESD-609 Code:

e1

Length:

19 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of DMA Channels:

64

No. of Terminals:

520

No. of Timers:

8

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA529,23X23,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

245

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

ROM Programmability:

MROM

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

19 mm

Peripheral IC Type:

Trade Compliance

TMS320DM648CUT9 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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