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TMS320C6202BZNY250

Texas Instruments

TMS320C6202BZNY250 by Texas Instruments

TMS320C6202BZNY250 by Texas Instruments is a 32-bit DSP with 131072 RAM words, 250 MHz clock frequency, and 384 terminals. Ideal for digital signal processing applications due to its integrated cache, 22-bit address bus width, and low power mode feature. Suitable for use in various electronic devices requiring high-speed data processing capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,352 parts In-Stock

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Digiode

USA . 1,464 parts In-Stock

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One Stop Electronics

USA . 228 parts In-Stock

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$5.000

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$5.000

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AZTECH Wire

Italy . 880 parts In-Stock

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$6.160

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Parana Technologies

USA . 276 parts In-Stock

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$46.236

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DigiPath Technology Company

USA . 1,261 parts In-Stock

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$50.911

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ChromeModa Solutions

Germany . 5,880 parts In-Stock

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$51.950

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$42.599

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$51.950

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IDEA Electronic Components Group

UK . 1,468 parts In-Stock

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$51.950

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$49.352

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$46.755

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$46.755

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Corohmni

South Africa . 2,610 parts In-Stock

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$104.142

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Microchip USA

USA . 2,237 parts In-Stock

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$146.710

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$144.160

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$142.880

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$141.610

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$144.160

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$141.610

Corphita

USA . 2,514 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 88 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS320C6202BZNY250 by Texas Instruments. Designed for high-performance digital signal processing applications, this DSP offers unparalleled quality and reliability. With integrated cache and a maximum clock frequency of 250 MHz, this powerhouse processor delivers lightning-fast results. Whether you're in telecommunications, automotive, or industrial automation, the TMS320C6202BZNY250 provides the value, benefits, and advantages you need to stay ahead of the competition. Trust Texas Instruments to elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the DSP, making it suitable for a variety of environments.

Integrated Cache: YES

Enhances processing speed and efficiency by storing frequently accessed data for quick retrieval.

Maximum Supply Voltage: 1.57 V

Allows for flexibility in power input while ensuring the safe operation of the DSP.

On Chip Data RAM Width: 8

Allows for efficient data processing and storage within the DSP.

Address Bus Width: 22

Enables the DSP to access a large memory space for handling complex algorithms and calculations.

Bit Size: 32

Offers high precision and accuracy in digital signal processing tasks.

Power Supplies (V): 1.5,3.3

Provides compatibility with common power sources, ensuring ease of integration.

No. of Terminals: 384

Allows for versatile connectivity options and expansion capabilities for peripherals.

Minimum Operating Temperature: 0 °C

Ensures reliable operation even in low-temperature environments.

Maximum Clock Frequency: 250 MHz

Enables fast processing speeds for real-time signal processing applications.

Technical Specifications

Digital Signal Processors (DSPs) TMS320C6202BZNY250 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 3.3V SUPPLY

Address Bus Width:

22

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

250 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B384

JESD-609 Code:

e1

Length:

18 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of DMA Channels:

4

No. of External Interrupts:

4

No. of Terminals:

384

No. of Timers:

2

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA384,22X22,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.5,3.3

Qualification:

Not Qualified

RAM Words:

131072

ROM Programmability:

MROM

Maximum Seated Height:

2.35 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.57 V

Minimum Supply Voltage:

1.43 V

Nominal Supply Voltage:

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

18 mm

Peripheral IC Type:

Trade Compliance

TMS320C6202BZNY250 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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