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TLV5624IDGKR

Texas Instruments

TLV5624IDGKR by Texas Instruments

TLV5624IDGKR by Texas Instruments is an 8-bit D/A converter with a max analog output voltage of 2.9V and settling time of 7us. Ideal for industrial applications, it operates at temperatures ranging from -40 to 85°C and has a sample rate of 0.233MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,420 parts In-Stock

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Digiode

USA . 3,105 parts In-Stock

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Bristol Electronics

USA . 1,691 parts In-Stock

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Atlantic Semiconductor

USA . 1,691 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 312 parts In-Stock

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$9.764

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Ampacity Inc.

Singapore . 692 parts In-Stock

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$14.000

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Parana Technologies

USA . 2,023 parts In-Stock

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$15.991

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$16.335

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$15.991

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Microchip USA

USA . 1,902 parts In-Stock

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$16.660

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$16.560

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$16.510

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$16.450

1,902

$16.660

$16.560

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$16.450

ChromeModa Solutions

Germany . 5,255 parts In-Stock

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$17.967

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$14.733

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IDEA Electronic Components Group

UK . 863 parts In-Stock

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$17.967

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$17.069

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$16.170

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863

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One Stop Electronics

USA . 360 parts In-Stock

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$31.000

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Corphita

USA . 1,611 parts In-Stock

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DigiPath Technology Company

USA . 810 parts In-Stock

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Perfect Parts

USA . 118 parts In-Stock

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Overview

Unlock unparalleled performance and precision with the TLV5624IDGKR by Texas Instruments, a leading manufacturer in the industry. This Digital-to-Analog Converter offers a maximum analog output voltage of 2.9V, making it ideal for a wide range of applications. With a compact square package design and fast settling time, this product provides exceptional value and reliability to customers. Experience high-quality output and seamless functionality with the TLV5624IDGKR – take your projects to the next level today!

Feature Benefit Bullets

Maximum Analog Output Voltage: 2.9 V

Higher maximum analog output voltage allows for greater versatility and compatibility with various systems.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides a durable and lightweight housing for the converter.

Surface Mount: YES

Surface mount capability enables easy integration into circuit boards, saving space and simplifying assembly.

No. of Bits: 8

8 bits provide a good balance between resolution and cost, making this converter suitable for many applications.

Maximum Settling Time: 7 us

Fast settling time ensures accurate and stable analog output signals, essential for high-performance applications.

Power Supplies (V): 3/5

Dual power supply options give flexibility in voltage selection, catering to a wider range of system requirements.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows the converter to function reliably in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the converter efficient and reliable.

Technical Specifications

Digital-to-Analog Converters TLV5624IDGKR attributes and parameters. Explore more Digital-to-Analog Converters devices from Texas Instruments

Converter Specifications

Technology:

CMOS

Sub-Category:

Other Converters

Input Format:

Serial

Input Bit Code:

Binary

Maximum Linearity Error (EL):

0.1953 %

Nominal Settling Time (tstl):

1 µs

Maximum Supply Current:

3.3 mA

Maximum Settling Time:

7 µs

Sample Rate:

233 kHz

No. of Bits:

8

No. of Functions:

1

Electrical Specifications

Nominal Supply Voltage:

3 V

Minimum Analog Output Voltage:

0 V

Maximum Analog Output Voltage:

2.9 V

Power Supplies:

3/5 V

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Time At Peak Reflow Temperature:

30 s

Moisture Sensitivity Level (MSL):

1

Form Factor

No. of Terminals:

8

Terminal Form:

Terminal Position:

Dual

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Finish:

Nickel Palladium Gold Silver

Surface Mount:

Yes

Width:

0.118 in (3 mm)

Length:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Code:

Package Equivalence Code:

SSOP8,.19

Standards and Codes

Qualified:

No

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Trade Compliance

TLV5624IDGKR Converters trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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