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TLV5608IYE

Texas Instruments

TLV5608IYE by Texas Instruments

TLV5608IYE by Texas Instruments is a 10-bit D/A converter with max analog output voltage of 2.9V and settling time of 7us. Ideal for industrial applications, it operates b/w -40 to 85°C, consumes 21mA supply current at 3V, and features a serial input format.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,709 parts In-Stock

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Digiode

USA . 293 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 556 parts In-Stock

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$16.677

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556

$16.677

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Parana Technologies

USA . 1,392 parts In-Stock

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$19.117

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$19.164

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$19.117

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DigiPath Technology Company

USA . 1,535 parts In-Stock

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$21.050

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$19.366

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1,535

$21.050

$19.366

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ChromeModa Solutions

Germany . 4,415 parts In-Stock

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$21.480

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$17.614

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$21.480

$17.614

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IDEA Electronic Components Group

UK . 2,060 parts In-Stock

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$21.480

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$20.406

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$19.332

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$21.480

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$19.332

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One Stop Electronics

USA . 1,267 parts In-Stock

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$35.000

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$35.000

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Corphita

USA . 3,035 parts In-Stock

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Microchip USA

USA . 163 parts In-Stock

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Overview

Experience unparalleled performance and precision with the Texas Instruments TLV5608IYE Digital-to-Analog Converter. Crafted by industry leader Texas Instruments, this cutting-edge device offers customers a seamless and efficient solution for converting digital signals to analog output voltage with extreme accuracy. Ideal for industrial applications requiring fast response times and high linearity, this converter boasts a sleek rectangular package shape and a compact grid array design. Elevate your projects with the TLV5608IYE and unlock limitless possibilities in the realm of digital signal processing.

Feature Benefit Bullets

Maximum Analog Output Voltage: 2.9 V

The high maximum analog output voltage of 2.9V allows for a wide range of output levels, increasing the versatility and flexibility of this digital-to-analog converter.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components of the converter, ensuring long-term reliability.

No. of Bits: 10

With 10 bits of resolution, this converter can provide precise and accurate analog output signals, making it suitable for applications that require high fidelity.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows this converter to be used in a variety of industrial environments without overheating or performance degradation.

Input Format: SERIAL

The serial input format simplifies the interface with other digital systems, making integration and communication with the converter more straightforward and efficient.

Technical Specifications

Digital-to-Analog Converters TLV5608IYE attributes and parameters. Explore more Digital-to-Analog Converters devices from Texas Instruments

Converter Specifications

Technology:

CMOS

Sub-Category:

Other Converters

Input Format:

Serial

Input Bit Code:

Binary, 2's Complement Binary

Maximum Linearity Error (EL):

0.1953 %

Nominal Settling Time (tstl):

3 µs

Maximum Supply Current:

21 mA

Maximum Settling Time:

7 µs

No. of Bits:

10

No. of Functions:

1

Electrical Specifications

Nominal Supply Voltage:

3 V

Minimum Analog Output Voltage:

0 V

Maximum Analog Output Voltage:

2.9 V

Power Supplies:

3/5 V

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Form Factor

No. of Terminals:

20

Terminal Form:

Terminal Position:

Bottom

Surface Mount:

Yes

Width:

0.075 in (1.91 mm)

Length:

0.123 in (3.118 mm)

Maximum Seated Height:

0.028 in (0.715 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Shape:

Package Style:

Grid Array, Very Thin Profile, Fine Pitch

Package Code:

Package Equivalence Code:

WAFER

Standards and Codes

Qualified:

No

JESD-30 Code:

R-PBGA-B20

Trade Compliance

TLV5608IYE Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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