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TLV4120IDGNG4

Texas Instruments

TLV4120IDGNG4 by Texas Instruments

TLV4120IDGNG4 by Texas Instruments is an Operational Amplifier with 3000uV Max Input Offset Voltage, 95dB Nominal CMRR, and 1400kHz Unity Gain Bandwidth. Ideal for industrial applications requiring low-bias current and high voltage feedback architecture in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,935 parts In-Stock

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8,935

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Digiode

USA . 561 parts In-Stock

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561

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,700 parts In-Stock

1+ parts

$6.533

100+ parts

-

1k+ parts

$7.275

10k+ parts

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1,700

$6.533

-

$7.275

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DigiPath Technology Company

USA . 361 parts In-Stock

1+ parts

$7.194

100+ parts

-

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361

$7.194

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ChromeModa Solutions

Germany . 5,843 parts In-Stock

1+ parts

$7.341

100+ parts

$6.020

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5,843

$7.341

$6.020

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IDEA Electronic Components Group

UK . 672 parts In-Stock

1+ parts

$7.341

100+ parts

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$6.607

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672

$7.341

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$6.607

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One Stop Electronics

USA . 667 parts In-Stock

1+ parts

$7.410

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667

$7.410

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AZTECH Wire

Italy . 401 parts In-Stock

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$18.931

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401

$18.931

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Corphita

USA . 2,671 parts In-Stock

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Microchip USA

USA . 1,642 parts In-Stock

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Overview

Elevate your electronic designs with the TLV4120IDGNG4 by Texas Instruments, a top-tier operational amplifier that guarantees exceptional quality and reliability. Designed with precision and crafted with expertise, this component is ideal for a wide range of applications in various industries. With a compact package body material and advanced technology, this op amp offers unmatched performance and efficiency. Experience seamless operation, reliable functionality, and enhanced design flexibility with the TLV4120IDGNG4. Upgrade your projects today and unlock a world of possibilities with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and helps in reducing the overall weight of the device.

Maximum Input Offset Voltage: 3000 uV

The low maximum input offset voltage ensures accuracy in signal processing and helps in minimizing errors in the output signal.

Maximum Average Bias Current (IIB): 0.0003 uA

The low average bias current helps in reducing power consumption and ensures efficient operation of the operational amplifier.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Nominal Common Mode Reject Ratio: 95 dB

The high common mode reject ratio allows the operational amplifier to reject common mode noise effectively, resulting in a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides compatibility with a wide range of systems and ensures stable operation of the operational amplifier.

Power Supplies (V): 2.7/5

The availability of multiple power supply options (2.7V and 5V) provides flexibility in design and allows for integration into different systems.

No. of Terminals: 8

The 8 terminals offer versatility in connectivity and allow for various input and output configurations to suit different application requirements.

Minimum Slew Rate: 0.5 V/us

The minimum slew rate of 0.5V/us ensures fast and efficient response to input signal changes, making the operational amplifier suitable for dynamic applications.

Maximum Supply Voltage Limit: 6 V

The maximum supply voltage limit of 6V ensures protection against overvoltage conditions, enhancing the durability and reliability of the operational amplifier.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40°C allows for use in harsh environmental conditions, ensuring reliable performance in various applications.

Nominal Unity Gain Bandwidth: 1400 kHz

The nominal unity gain bandwidth of 1400kHz indicates high frequency response and allows for fast signal processing, making the operational amplifier suitable for high-speed applications.

Technology: CMOS

The CMOS technology used in the operational amplifier ensures low power consumption, high speed, and high noise immunity, making it ideal for battery-powered devices and high-performance applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, the product is versatile and can be used for various signal processing tasks such as amplification, filtering, and signal conditioning, making it a versatile choice for different applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV4120IDGNG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

95 dB

Minimum Common Mode Rejection Ratio (CMRR ):

52 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.5 V/us

Nominal Slew Rate:

1.6 V/us

Maximum Input Offset Current (IIO):

25 pA

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.7 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV4120IDGNG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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