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TLV4112IDGNRG4

Texas Instruments

TLV4112IDGNRG4 by Texas Instruments

TLV4112IDGNRG4 by Texas Instruments is a CMOS Operational Amplifier with 3500uV Max Input Offset Voltage, 68dB Nominal CMRR, and 2700kHz Unity Gain Bandwidth. Ideal for automotive applications due to its low-bias current, VOLTAGE-FEEDBACK architecture, and compact square package design.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 10,060 parts In-Stock

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Vyrian

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Nova Conductors

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Advanced Electronics

New Zealand . 850 parts In-Stock

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$2.239

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$2.217

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$2.127

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850

$2.239

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One Stop Electronics

USA . 684 parts In-Stock

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$4.410

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Parana Technologies

USA . 1,397 parts In-Stock

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$6.323

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$7.071

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DigiPath Technology Company

USA . 1,712 parts In-Stock

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$6.962

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$6.405

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ChromeModa Solutions

Germany . 5,770 parts In-Stock

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$7.104

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$5.825

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IDEA Electronic Components Group

UK . 1,207 parts In-Stock

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$6.394

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Ampacity Inc.

Singapore . 606 parts In-Stock

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AZTECH Wire

Italy . 640 parts In-Stock

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Microchip USA

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Overview

Unlock the power of precision with the TLV4112IDGNRG4 by Texas Instruments! As a leading manufacturer in operational amplifiers, Texas Instruments ensures top-quality components for a wide range of applications. This versatile op amp offers customers exceptional value with its low input offset voltage, minimal bias current, and high common mode rejection ratio. Experience superior performance and reliability in automotive-grade environments with the TLV4112IDGNRG4. Elevate your designs with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the operational amplifier, making it suitable for various applications and environments.

Maximum Input Offset Voltage: 3500 uV

Low input offset voltage ensures accuracy in signal processing and minimizes errors in the output signal.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and facilitating automated assembly processes.

Nominal Common Mode Reject Ratio: 68 dB

High common mode rejection ratio helps in filtering out unwanted noise and interference from the input signal, resulting in a cleaner output.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes it suitable for use in harsh environmental conditions and ensures reliable performance.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and high switching speeds, making the operational amplifier energy-efficient and ideal for portable or battery-operated devices.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product provides high gain, high input impedance, and low output impedance, making it suitable for a wide range of signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV4112IDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

68 dB

Minimum Common Mode Rejection Ratio (CMRR ):

68 dB

Input Offset Voltage Limit:

3500 uV

Minimum Voltage Gain:

7943

Minimum Slew Rate:

0.55 V/us

Nominal Slew Rate:

1.57 V/us

Maximum Input Offset Current (IIO):

25 pA

Peak Bias Current:

500 pA

Maximum Bias Current (IIB) @25 °C:

25 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV4112IDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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