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TLV4111IDGNRG4

Texas Instruments

TLV4111IDGNRG4 by Texas Instruments

TLV4111IDGNRG4 by Texas Instruments is an Operational Amplifier with 4000uV Max Input Offset Voltage, 0.0005uA Max Average Bias Current, and 63dB Nominal CMRR. Ideal for automotive applications due to its low-bias feature and 2700kHz Unity Gain Bandwidth in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,882 parts In-Stock

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Digiode

USA . 4,529 parts In-Stock

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4,529

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Nova Conductors

Japan . 74 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 418 parts In-Stock

1+ parts

$3.996

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$4.464

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418

$3.996

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$4.464

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ChromeModa Solutions

Germany . 6,474 parts In-Stock

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$4.490

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$3.682

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$4.490

$3.682

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IDEA Electronic Components Group

UK . 1,771 parts In-Stock

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$4.490

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$4.041

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One Stop Electronics

USA . 1,461 parts In-Stock

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$5.410

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$5.410

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Ampacity Inc.

Singapore . 1,341 parts In-Stock

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$7.410

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$7.410

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AZTECH Wire

Italy . 265 parts In-Stock

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$16.548

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Continental Prestige Electronics

USA . 6,217 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,626 parts In-Stock

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Microchip USA

USA . 2,774 parts In-Stock

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Argo Parts USA

USA . 2,333 parts In-Stock

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DigiPath Technology Company

USA . 643 parts In-Stock

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$4.048

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Corphita

USA . 562 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Discover the power of Texas Instruments with the TLV4111IDGNRG4 Operational Amplifier. This high-quality component offers precision and reliability for a wide range of applications. From automotive to industrial use, this amplifier provides exceptional performance with minimal bias current and maximum input offset voltage. Trust in Texas Instruments for cutting-edge technology that delivers value and efficiency to your projects. Elevate your designs with the TLV4111IDGNRG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the inner components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage helps in minimizing errors in the output signal, leading to accurate performance.

Maximum Average Bias Current (IIB): 0.0005 uA

Low bias current ensures minimal power consumption and high efficiency in the operation of the op amp.

Nominal Common Mode Reject Ratio: 63 dB

A high common mode rejection ratio indicates the op amp's ability to reject common noise from the input signal, resulting in a clean output.

Nominal Supply Voltage / Vsup (V): 3

This low supply voltage requirement makes the op amp suitable for low-power applications and portable devices.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the op amp to be used in various environmental conditions without compromising performance.

Technology: CMOS

The CMOS technology used in this op amp provides low power consumption and high noise immunity, making it suitable for battery-powered applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product offers high gain, high input impedance, and low output impedance, making it versatile for a variety of signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV4111IDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

63 dB

Minimum Common Mode Rejection Ratio (CMRR ):

68 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

7943

Minimum Slew Rate:

0.55 V/us

Nominal Slew Rate:

1.57 V/us

Maximum Input Offset Current (IIO):

25 pA

Peak Bias Current:

500 pA

Maximum Bias Current (IIB) @25 °C:

25 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV4111IDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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