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TLV4110IDGNRG4

Texas Instruments

TLV4110IDGNRG4 by Texas Instruments

TLV4110IDGNRG4 by Texas Instruments is a CMOS operational amplifier with a max input offset voltage of 4000 uV. It has a nominal common mode reject ratio of 63 dB and operates at a supply voltage of 3 V. This amplifier is commonly used in automotive applications due to its low-bias and temperature grade capabilities.

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3

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1k+

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Vyrian

USA . 3,111 parts In-Stock

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Digiode

USA . 1,466 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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One Stop Electronics

USA . 1,193 parts In-Stock

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$0.410

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Ampacity Inc.

Singapore . 1,302 parts In-Stock

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Parana Technologies

USA . 2,016 parts In-Stock

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DigiPath Technology Company

USA . 306 parts In-Stock

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$6.334

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$5.827

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ChromeModa Solutions

Germany . 6,008 parts In-Stock

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$6.463

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IDEA Electronic Components Group

UK . 106 parts In-Stock

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AZTECH Wire

Italy . 896 parts In-Stock

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Continental Prestige Electronics

USA . 5,590 parts In-Stock

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Argo Parts USA

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Corphita

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Overview

Discover the TLV4110IDGNRG4, a powerful operational amplifier manufactured by Texas Instruments. This high-quality device offers exceptional performance and reliability, making it perfect for a wide range of applications. With its small outline and thin profile package, it is designed to fit seamlessly into any project. Whether you need precise signal amplification or accurate voltage control, this op amp delivers outstanding results. Say goodbye to noise and distortion with its impressive common mode reject ratio of 63 dB. Plus, with its low bias current and low power consumption, you can enjoy energy efficiency without compromising on performance. Upgrade your designs with the TLV4110IDGNRG4 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the operational amplifier, ensuring reliability and long-term performance.

Maximum Input Offset Voltage: 4000 uV

Low input offset voltage helps minimize errors in the amplifier's output signal, making it suitable for precision applications where accuracy is crucial.

Nominal Common Mode Reject Ratio: 63 dB

High common mode rejection ratio indicates the amplifier's ability to reject common-mode signals, providing a clean output signal in noisy environments.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and facilitating mass production of electronic devices.

Minimum Slew Rate: 0.55 V/us

Fast slew rate enables the amplifier to respond quickly to changes in the input signal, making it suitable for applications requiring high-speed signal processing.

Maximum Supply Voltage Limit: 6 V

With a maximum supply voltage of 6V, this operational amplifier is compatible with a wide range of power supply configurations, increasing its versatility.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the operational amplifier suitable for battery-powered and high-impedance applications.

Nominal Unity Gain Bandwidth: 2700 kHz

High unity gain bandwidth indicates the amplifier's ability to maintain stable operation at high frequencies, making it suitable for audio and signal processing applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this operational amplifier can withstand elevated temperatures without compromising performance, making it suitable for industrial and automotive applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV4110IDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

63 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

2200

Minimum Slew Rate:

0.55 V/us

Nominal Slew Rate:

1.57 V/us

Peak Bias Current:

500 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV4110IDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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