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TLV4113CDGQG4

Texas Instruments

TLV4113CDGQG4 by Texas Instruments

TLV4113CDGQG4 by Texas Instruments is a CMOS Operational Amplifier with 4000uV Max Input Offset Voltage, 63dB Nominal CMRR, and 2700kHz Unity Gain Bandwidth. Ideal for commercial applications requiring low-bias current and VFB architecture in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,396 parts In-Stock

1+ parts

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1k+ parts

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4,396

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Digiode

USA . 947 parts In-Stock

1+ parts

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947

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,120 parts In-Stock

1+ parts

$4.178

100+ parts

-

1k+ parts

$4.619

10k+ parts

-

1,120

$4.178

-

$4.619

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DigiPath Technology Company

USA . 36 parts In-Stock

1+ parts

$4.600

100+ parts

$4.232

1k+ parts

-

10k+ parts

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36

$4.600

$4.232

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ChromeModa Solutions

Germany . 4,810 parts In-Stock

1+ parts

$4.694

100+ parts

$3.849

1k+ parts

-

10k+ parts

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4,810

$4.694

$3.849

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IDEA Electronic Components Group

UK . 671 parts In-Stock

1+ parts

$4.694

100+ parts

-

1k+ parts

$4.225

10k+ parts

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671

$4.694

-

$4.225

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AZTECH Wire

Italy . 264 parts In-Stock

1+ parts

$8.994

100+ parts

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10k+ parts

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264

$8.994

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One Stop Electronics

USA . 1,368 parts In-Stock

1+ parts

$9.410

100+ parts

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10k+ parts

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1,368

$9.410

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Corphita

USA . 2,546 parts In-Stock

1+ parts

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2,546

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Microchip USA

USA . 191 parts In-Stock

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191

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Overview

Maximize performance with the TLV4113CDGQG4 by Texas Instruments, a top-tier manufacturer of Operational Amplifiers. This versatile component offers unparalleled precision and reliability for a wide range of applications. Whether you're designing audio equipment, sensor interfaces, or control systems, this compact and efficient Op Amp delivers exceptional value, superior functionality, and unmatched quality. Trust Texas Instruments to provide cutting-edge technology that empowers your projects to reach new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, making it suitable for various operating conditions.

Maximum Input Offset Voltage: 4000 uV

Lower input offset voltage ensures better accuracy and precision in signal processing applications.

Nominal Common Mode Reject Ratio: 63 dB

High common mode rejection ratio helps in minimizing noise and interference from the input signal, leading to cleaner output signals.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making this operational amplifier efficient and reliable for battery-operated devices.

Maximum Supply Current: 3 mA

Low supply current requirement ensures energy efficiency and can help increase the battery life of portable devices.

Technical Specifications

Operational Amplifiers (Op Amps) TLV4113CDGQG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.7 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

63 dB

Input Offset Voltage Limit:

4000 uV

Minimum Voltage Gain:

2200

Minimum Slew Rate:

0.55 V/us

Nominal Slew Rate:

1.57 V/us

Peak Bias Current:

100 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

TLV4113CDGQG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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