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TLK1101ERGPTG4

Texas Instruments

TLK1101ERGPTG4 by Texas Instruments

TLK1101ERGPTG4 by Texas Instruments is an ATM/SONET/SDH circuit with 3.3V supply, operating from -40 to 100°C. It comes in a square chip carrier package with 20 terminals and no-lead terminal form, suitable for SONET applications. With a low supply current of 120mA, it offers high performance in industrial temperature grades.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,571 parts In-Stock

1+ parts

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2,571

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Vyrian

USA . 1,909 parts In-Stock

1+ parts

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1,909

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Nova Conductors

Japan . 29 parts In-Stock

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29

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 506 parts In-Stock

1+ parts

$7.219

100+ parts

-

1k+ parts

$7.722

10k+ parts

-

506

$7.219

-

$7.722

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DigiPath Technology Company

USA . 999 parts In-Stock

1+ parts

$7.949

100+ parts

$7.313

1k+ parts

-

10k+ parts

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999

$7.949

$7.313

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ChromeModa Solutions

Germany . 6,041 parts In-Stock

1+ parts

$8.111

100+ parts

$6.651

1k+ parts

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6,041

$8.111

$6.651

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IDEA Electronic Components Group

UK . 1,846 parts In-Stock

1+ parts

$8.111

100+ parts

-

1k+ parts

$7.300

10k+ parts

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1,846

$8.111

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$7.300

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AZTECH Wire

Italy . 393 parts In-Stock

1+ parts

$18.847

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393

$18.847

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Ampacity Inc.

Singapore . 746 parts In-Stock

1+ parts

$207.000

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746

$207.000

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One Stop Electronics

USA . 1,275 parts In-Stock

1+ parts

$358.000

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1,275

$358.000

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 646 parts In-Stock

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646

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Overview

Upgrade your network systems with the TLK1101ERGPTG4 from Texas Instruments, a leading manufacturer known for its high-quality products. This ATM/SONET/SDH circuit offers reliable performance and seamless connectivity for your SONET applications. With a compact design and industrial-grade temperature tolerance, this chip carrier ensures optimal functionality even in challenging environments. Trust Texas Instruments to deliver cutting-edge technology that enhances your network efficiency and reliability. Elevate your networking experience with the TLK1101ERGPTG4 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for use in various telecom applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards, saving time and effort during manufacturing.

Power Supplies (V): 3.3

The power supply of 3.3V ensures compatibility with standard power sources, making integration into existing systems seamless.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this product can withstand high temperatures, ensuring reliable performance in harsh environments.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C allows for use in cold environments without compromising functionality.

Applications: SONET

Specifically designed for SONET applications, this product is optimized for high-speed telecommunications networks, ensuring efficient data transmission.

Technical Specifications

ATM/SONET/SDH Circuits TLK1101ERGPTG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SONET

JESD-30 Code:

S-PQCC-N20

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

120 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

TLK1101ERGPTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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