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TLC5615IDGKG4

Texas Instruments

TLC5615IDGKG4 by Texas Instruments

TLC5615IDGKG4 by Texas Instruments is a 10-bit DAC with max output voltage of 5.1V, settling time of 12.5us, and linearity error of 0.0977%. Ideal for industrial applications requiring precise analog signal generation in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,763 parts In-Stock

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Digiode

USA . 544 parts In-Stock

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544

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Distributors (Availability)

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AZTECH Wire

Italy . 588 parts In-Stock

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$10.171

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588

$10.171

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Parana Technologies

USA . 970 parts In-Stock

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$16.385

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$1,521.586

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$14.746

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970

$16.385

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$14.746

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DigiPath Technology Company

USA . 2,160 parts In-Stock

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$18.042

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$16.598

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$18.042

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ChromeModa Solutions

Germany . 6,310 parts In-Stock

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$18.410

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$15.096

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$18.410

$15.096

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IDEA Electronic Components Group

UK . 189 parts In-Stock

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$18.410

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$17.490

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$16.569

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One Stop Electronics

USA . 734 parts In-Stock

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$25.000

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Component Stockers USA

USA . 369 parts In-Stock

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$99.990

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Corphita

USA . 3,306 parts In-Stock

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Microchip USA

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Overview

Unlock unparalleled precision and performance with the TLC5615IDGKG4 by Texas Instruments. As a leader in digital-to-analog converters, Texas Instruments delivers top-notch quality and reliability. This versatile component is perfect for a wide range of applications, offering a maximum analog output voltage of 5.1V and a fast settling time of just 12.5 microseconds. Whether you're designing industrial equipment or consumer electronics, this cutting-edge technology will elevate your products to new heights. Trust Texas Instruments to provide the innovative solutions you need to stay ahead of the competition. Elevate your designs with the TLC5615IDGKG4 today.

Feature Benefit Bullets

Maximum Analog Output Voltage: 5.1 V

Higher maximum analog output voltage allows for greater flexibility in the range of output signals that can be generated.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the internal components of the converter.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and reducing assembly complexity.

No. of Bits: 10

Higher number of bits allows for higher resolution and accuracy in the conversion process.

Maximum Settling Time: 12.5 us

Fast settling time ensures quick response and accuracy in generating output signals.

Power Supplies (V): 5

Standard power supply voltage of 5V makes it easy to integrate with existing systems and circuits.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes this converter suitable for use in various industrial environments.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making it reliable for accurate signal conversion.

Technical Specifications

Digital-to-Analog Converters TLC5615IDGKG4 attributes and parameters. Explore more Digital-to-Analog Converters devices from Texas Instruments

Converter Specifications

Technology:

CMOS

Sub-Category:

Other Converters

Input Format:

Serial

Input Bit Code:

Binary

Maximum Linearity Error (EL):

0.0977 %

Nominal Settling Time (tstl):

12.5 µs

Maximum Supply Current:

350 μA

Maximum Settling Time:

12.5 µs

Sample Rate:

75 kHz

No. of Bits:

10

No. of Functions:

1

Electrical Specifications

Nominal Supply Voltage:

5 V

Minimum Analog Output Voltage:

0 V

Maximum Analog Output Voltage:

5.1 V

Power Supplies:

5 V

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Time At Peak Reflow Temperature:

30 s

Moisture Sensitivity Level (MSL):

1

Form Factor

No. of Terminals:

8

Terminal Form:

Terminal Position:

Dual

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Finish:

Nickel Palladium Gold Silver

Surface Mount:

Yes

Width:

0.118 in (3 mm)

Length:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Code:

Package Equivalence Code:

TSSOP8,.19

Standards and Codes

Qualified:

No

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Trade Compliance

TLC5615IDGKG4 Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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