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TL16C550CFN

Texas Instruments

TL16C550CFN by Texas Instruments

TL16C550CFN by Texas Instruments is a Serial Communication Controller with 44 terminals and 3.3/5 V power supplies. It supports data transfer rates up to 0.125 MBps, operates b/w 0-70 °C, and communicates using ASYNC and BIT protocols. Ideal for applications requiring high-speed serial communication in commercial-grade environments.

Median Price

$4.844

Lifecycle Status

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51

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1k+

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Chip1Stop

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Freelance Electronics

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Semicontronic

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Ampacity Inc.

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South Africa . 308 parts In-Stock

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Overview

Enhance your communication systems with the TL16C550CFN by Texas Instruments, a top-tier manufacturer known for quality and reliability. As a leading product in the Serial Communication Controllers category, this chip carrier offers seamless data transfer at a rate of 0.125 MBps, making it ideal for a wide range of applications. With a maximum supply voltage of 5.25V and power supplies of 3.3/5V, this controller ensures efficiency while maintaining high performance. Trust Texas Instruments to deliver value and innovation with the TL16C550CFN, providing your projects with the competitive edge they need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Surface Mount: YES

Easily mountable on PCBs for efficient integration into systems.

Maximum Supply Voltage: 5.25 V

Supports a wide range of supply voltages for flexibility in power input.

Address Bus Width: 3

Allows for efficient addressing and data management within the controller.

Package Shape: SQUARE

Compact shape for space-saving design considerations.

Power Supplies (V): 3.3/5

Versatile power supply options for compatibility with different systems.

No. of Terminals: 44

Sufficient number of terminals for connecting various components and peripherals.

Package Style (Meter): CHIP CARRIER

Chip carrier package style for easy handling and installation.

Minimum Supply Voltage: 4.75 V

Ensures stable operation even at lower supply voltages.

Maximum Operating Temperature: 70 °C

High operating temperature range for reliable performance in varying conditions.

Maximum Data Transfer Rate: 0.125 MBps

Fast data transfer rate for efficient communication between devices.

Minimum Operating Temperature: 0 °C

Operational at low temperatures for use in diverse environments.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish for enhanced durability and connectivity.

Terminal Position: QUAD

Quad terminal position for secure connections and stability.

Maximum Seated Height: 4.57 mm

Low-profile design for compact and sleek installations.

Width: 16.585 mm

Optimal width for space efficiency and compatibility with standard layouts.

Data Encoding or Decoding Method: NRZ

Efficient data encoding/decoding method for accurate information transfer.

External Data Bus Width: 8

Wide external data bus width for handling large volumes of data efficiently.

Communication Protocol: ASYNC, BIT

Supports asynchronous communication and bit-level protocols for versatility.

Maximum Clock Frequency: 16 MHz

High clock frequency for fast data processing and communication speed.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand peak reflow temperatures for efficient soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for reliable assembly processes.

Length: 16.585 mm

Optimal length for compact designs and seamless integration.

Temperature Grade: COMMERCIAL

Suitable for commercial use with stable performance under standard temperature conditions.

Peripheral IC Type: SERIAL IO/COMMUNICATION CONTROLLER, SERIAL

Versatile controller type for handling serial communication tasks efficiently.

Technology: MOS

MOS technology for low power consumption and high integration capabilities.

Terminal Form: J BEND

J bend terminal form for secure connections and ease of installation.

Maximum Supply Current: 10 mA

Low supply current requirement for energy-efficient operation.

Nominal Supply Voltage: 5 V

Standard nominal supply voltage for widespread compatibility.

Terminal Pitch: 1.27 mm

Optimal terminal pitch for efficient board layout and connections.

Moisture Sensitivity Level (MSL): 3

MSL level 3 for moderate moisture sensitivity, suitable for most environments.

Technical Specifications

Serial Communication Controllers TL16C550CFN attributes and parameters. Explore more Serial Communication Controllers devices from Texas Instruments

Specs

Additional Features:

ALSO OPERATES AT 3.3V SUPPLY AT 14.9 MHZ

Address Bus Width:

3

Boundary Scan:

NO

Maximum Clock Frequency:

16 MHz

Communication Protocol:

ASYNC, BIT

Data Encoding or Decoding Method:

NRZ

Maximum Data Transfer Rate:

.125 MBps

External Data Bus Width:

8

JESD-30 Code:

S-PQCC-J44

JESD-609 Code:

e4

Length:

16.585 mm

Low Power Mode:

NO

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of I/O Lines:

0

No. of Serial I/Os:

1

No. of Terminals:

44

On Chip Data RAM Width:

0

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC44,.7SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

RAM Words:

0

Maximum Seated Height:

4.57 mm

Sub-Category:

Serial IO/Communication Controllers

Maximum Supply Current:

10 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16.585 mm

Trade Compliance

TL16C550CFN Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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