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TIP561

Texas Instruments

TIP561 by Texas Instruments

TIP561 by Texas Instruments is an NPN transistor with a max power dissipation of 5.5W and max collector current of 7.5A. With a min DC current gain of 10, it's ideal for applications requiring high power amplification in circuits operating up to 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 4,112 parts In-Stock

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Digiode

USA . 418 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 21 parts In-Stock

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Holdelec - ElecDif-Pro

France . 21 parts In-Stock

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PUI

USA . 18 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Parana Technologies

USA . 2,020 parts In-Stock

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$0.748

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$1.755

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$0.748

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$1.755

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DigiPath Technology Company

USA . 1,956 parts In-Stock

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$0.823

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$0.757

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1,956

$0.823

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IDEA Electronic Components Group

UK . 1,035 parts In-Stock

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$0.840

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$0.756

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$0.840

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ChromeModa Solutions

Germany . 437 parts In-Stock

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$0.840

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$0.689

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437

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AZTECH Wire

Italy . 455 parts In-Stock

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$12.383

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455

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One Stop Electronics

USA . 1,154 parts In-Stock

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$48.050

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$48.050

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Corphita

USA . 2,519 parts In-Stock

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Overview

Unlock the power of innovation with the TIP561 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products that exceed expectations. The TIP561 falls under the category of Other Function Transistors and offers unparalleled performance. With its NPN polarity and single configuration, this transistor can handle a maximum power dissipation of 5.5 W and a maximum collector current of 7.5 A. Whether you're working on automotive, industrial, or consumer electronics applications, the TIP561 provides reliable operation and excellent efficiency. Trust Texas Instruments to provide cutting-edge solutions for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 5.5 W

With a high maximum power dissipation, this transistor can handle higher power loads without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures efficient amplification of input signals, making this transistor suitable for audio and signal processing applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance allows this transistor to withstand higher temperatures, making it suitable for use in environments with elevated heat levels.

Maximum Collector Current (IC): 7.5 A

With a high maximum collector current, this transistor can handle large current loads, making it ideal for power switching applications.

Technical Specifications

Other Function Transistors TIP561 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

TIP561 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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