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TIP560

Texas Instruments

TIP560 by Texas Instruments

TIP560 by Texas Instruments is an NPN transistor with max power dissipation of 5.5W, max collector current of 7.5A, and min DC current gain of 10. Ideal for applications requiring high power handling in a single configuration at temperatures up to 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,315 parts In-Stock

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Digiode

USA . 986 parts In-Stock

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986

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LittleDiode

UK . 1 parts In-Stock

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1

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Parana Technologies

USA . 1,765 parts In-Stock

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$1.065

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$1.919

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1,765

$1.065

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$1.919

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DigiPath Technology Company

USA . 385 parts In-Stock

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$1.173

100+ parts

$1.079

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385

$1.173

$1.079

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ChromeModa Solutions

Germany . 5,174 parts In-Stock

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$1.197

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$0.982

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5,174

$1.197

$0.982

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IDEA Electronic Components Group

UK . 987 parts In-Stock

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$1.197

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$1.077

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987

$1.197

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$1.077

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AZTECH Wire

Italy . 593 parts In-Stock

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$10.559

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593

$10.559

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One Stop Electronics

USA . 242 parts In-Stock

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$54.050

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Corphita

USA . 2,157 parts In-Stock

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Perfect Parts

USA . 166 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 74 parts In-Stock

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Overview

Experience top-notch quality and reliable performance with the TIP560 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers exceptional products like the TIP560 to meet your needs. This NPN transistor offers a multitude of applications making it a versatile choice for various projects. With a maximum power dissipation of 5.5W and a maximum collector current of 7.5A, the TIP560 provides exceptional value and benefits to customers looking for a high-quality solution. Choose the TIP560 for your next project and experience the advantages firsthand.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and switch applications due to their high input impedance and current gain.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits compared to multiple configurations.

Maximum Power Dissipation (Abs): 5.5 W

With a high maximum power dissipation, this transistor can handle high power loads without getting damaged, providing reliability in demanding applications.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures that the transistor can provide sufficient amplification of input signals, making it suitable for various electronic projects.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures without performance degradation, providing stability in harsh environments.

Maximum Collector Current (IC): 7.5 A

The high maximum collector current rating of 7.5 A makes this transistor suitable for handling large current loads, making it ideal for power applications.

Technical Specifications

Other Function Transistors TIP560 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

TIP560 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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