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TIP55A

Texas Instruments

TIP55A by Texas Instruments

TIP55A by Texas Instruments is an NPN transistor with a max power dissipation of 3W, max collector current of 7.5A, and min DC current gain of 10. Ideal for applications requiring high power handling in a single configuration at temperatures up to 140°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,277 parts In-Stock

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3,277

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Digiode

USA . 775 parts In-Stock

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775

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Electronic Expediters

USA . 9 parts In-Stock

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9

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Distributors (Availability)

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Parana Technologies

USA . 906 parts In-Stock

1+ parts

$0.700

100+ parts

-

1k+ parts

$1.736

10k+ parts

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906

$0.700

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$1.736

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DigiPath Technology Company

USA . 2,333 parts In-Stock

1+ parts

$0.771

100+ parts

$0.710

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2,333

$0.771

$0.710

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ChromeModa Solutions

Germany . 6,340 parts In-Stock

1+ parts

$0.787

100+ parts

$0.645

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6,340

$0.787

$0.645

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IDEA Electronic Components Group

UK . 1,305 parts In-Stock

1+ parts

$0.787

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$0.708

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1,305

$0.787

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$0.708

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One Stop Electronics

USA . 912 parts In-Stock

1+ parts

$7.050

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912

$7.050

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AZTECH Wire

Italy . 334 parts In-Stock

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$8.602

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334

$8.602

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Semicontronic

India . 1,465 parts In-Stock

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$46.050

100+ parts

$44.899

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$44.668

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1,465

$46.050

$44.899

$44.668

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Corphita

USA . 3,397 parts In-Stock

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3,397

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Overview

Unleash the power of Texas Instruments with the TIP55A NPN transistor! With a maximum power dissipation of 3W and a minimum DC current gain of 10, this single configuration transistor offers top-notch performance for a wide range of applications. Whether you're building audio amplifiers, power supplies, or motor drivers, the TIP55A provides reliable and efficient operation. Trust in Texas Instruments' reputation for quality and innovation to deliver the best value and benefits to meet your project needs. Choose the TIP55A for superior performance and reliability.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are known for their high efficiency and low noise, making them a good choice for various electronic applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easier to integrate into electronic systems, providing a straightforward solution for a variety of applications.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle higher power levels without overheating, ensuring reliable performance in demanding conditions.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 indicates good amplification capabilities, allowing for signal amplification with minimal distortion and improved overall performance of the electronic circuit.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature of 140°C ensures that the transistor can withstand elevated temperatures without losing functionality, making it suitable for use in environments with higher operating temperatures.

Maximum Collector Current (IC): 7.5 A

The high maximum collector current rating of 7.5A allows the transistor to handle large current flows, making it suitable for applications requiring high power output and current handling capabilities.

Technical Specifications

Other Function Transistors TIP55A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

TIP55A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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