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TIP556

Texas Instruments

TIP556 by Texas Instruments

TIP556 by Texas Instruments is an NPN transistor with a max power dissipation of 100W and max collector current of 3A. With a min DC current gain of 30, it operates up to 175°C, making it suitable for high-power applications like amplifiers and power supplies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,479 parts In-Stock

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5,479

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Digiode

USA . 1,544 parts In-Stock

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1,544

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Electronic Expediters

USA . 50 parts In-Stock

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50

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DF Sales Co.

USA . 17 parts In-Stock

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17

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DF Sales Co.

USA . 17 parts In-Stock

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17

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,370 parts In-Stock

1+ parts

$1.275

100+ parts

-

1k+ parts

$2.038

10k+ parts

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1,370

$1.275

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$2.038

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DigiPath Technology Company

USA . 1,095 parts In-Stock

1+ parts

$1.404

100+ parts

$1.292

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1,095

$1.404

$1.292

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ChromeModa Solutions

Germany . 2,186 parts In-Stock

1+ parts

$1.433

100+ parts

$1.175

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2,186

$1.433

$1.175

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IDEA Electronic Components Group

UK . 229 parts In-Stock

1+ parts

$1.433

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$1.290

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229

$1.433

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$1.290

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AZTECH Wire

Italy . 580 parts In-Stock

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$17.219

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580

$17.219

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One Stop Electronics

USA . 1,296 parts In-Stock

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$54.050

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1,296

$54.050

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Corphita

USA . 2,928 parts In-Stock

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2,928

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Overview

Experience unmatched performance and reliability with the TIP556 by Texas Instruments. As a trusted manufacturer, Texas Instruments delivers top-notch quality in the category of Other Function Transistors. This NPN transistor offers a multitude of applications, providing customers with exceptional value and benefits. From its high power dissipation to its impressive operating temperature range, the TIP556 is the perfect choice for your electronic projects. Trust Texas Instruments for all your transistor needs.

Feature Benefit Bullets

Polarity or Channel Type

NPN transistors are commonly used in amplification circuits, making this product suitable for audio and signal processing applications.

Configuration

The single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Maximum Power Dissipation (Abs)

With a high maximum power dissipation, this transistor can handle large power loads and is suitable for high-power applications.

Minimum DC Current Gain (hFE)

A higher DC current gain provides better amplification capabilities and can improve the overall performance of the circuit.

Maximum Operating Temperature

The high maximum operating temperature ensures the transistor can withstand heat and operate reliably in various environments.

Maximum Collector Current (IC)

With a high maximum collector current, this transistor can handle significant amounts of current flow, making it suitable for power applications.

Nominal Transition Frequency (fT)

The nominal transition frequency indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Other Function Transistors TIP556 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

TIP556 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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