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TIP555

Texas Instruments

TIP555 by Texas Instruments

TIP555 by Texas Instruments is an NPN transistor with a max power dissipation of 100W, ideal for applications requiring a single configuration. With a min hFE of 30 and max IC of 3A, it operates up to 175°C. Its fT of 2.5MHz makes it suitable for various electronic circuits needing high power handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,039 parts In-Stock

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5,039

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Digiode

USA . 3,079 parts In-Stock

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3,079

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 745 parts In-Stock

1+ parts

$1.730

100+ parts

-

1k+ parts

$2.312

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745

$1.730

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$2.312

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DigiPath Technology Company

USA . 629 parts In-Stock

1+ parts

$1.905

100+ parts

$1.753

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-

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629

$1.905

$1.753

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ChromeModa Solutions

Germany . 603 parts In-Stock

1+ parts

$1.944

100+ parts

$1.594

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-

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603

$1.944

$1.594

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IDEA Electronic Components Group

UK . 410 parts In-Stock

1+ parts

$1.944

100+ parts

-

1k+ parts

$1.750

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410

$1.944

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$1.750

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AZTECH Wire

Italy . 480 parts In-Stock

1+ parts

$19.285

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480

$19.285

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One Stop Electronics

USA . 1,130 parts In-Stock

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$25.050

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1,130

$25.050

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Semicontronic

India . 290 parts In-Stock

1+ parts

$45.050

100+ parts

$43.924

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$43.698

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290

$45.050

$43.924

$43.698

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Ampacity Inc.

Singapore . 951 parts In-Stock

1+ parts

$51.050

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951

$51.050

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Corphita

USA . 3,839 parts In-Stock

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3,839

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Corohmni

South Africa . 121 parts In-Stock

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Overview

Unlock the power of innovation with the TIP555 by Texas Instruments. Crafted with precision and excellence, this NPN transistor offers a world of possibilities for your projects. Whether you're looking to amplify signals or switch circuits, the TIP555 delivers reliable performance with a maximum power dissipation of 100W and a minimum DC current gain of 30. Trust in Texas Instruments' legacy of quality and experience the value that this single configuration transistor brings to your designs. Elevate your creations and bring your ideas to life with the TIP555.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, making this product suitable for various applications where signal amplification is required.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuit designs and can be more reliable than multiple configuration transistors.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures that the transistor can provide sufficient amplification in circuits, making it a reliable choice for signal amplification.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand higher temperatures, making it suitable for applications where heat may be a concern.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows this transistor to handle higher current levels, making it suitable for applications that require high current amplification.

Nominal Transition Frequency (fT): 2.5 MHz

With a nominal transition frequency of 2.5 MHz, this transistor can operate at higher frequencies, making it suitable for applications that require fast switching speeds.

Technical Specifications

Other Function Transistors TIP555 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

TIP555 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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