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TCA4311DGKRG4

Texas Instruments

TCA4311DGKRG4 by Texas Instruments

TCA4311DGKRG4 by Texas Instruments is a buffer amplifier with 175000 uV max input offset voltage, 3V nominal voltage, and 0.05A min output current. It is used in industrial applications for signal buffering and amplification in tight spaces due to its small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,974 parts In-Stock

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Bristol Electronics

USA . 2,490 parts In-Stock

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2,490

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Digiode

USA . 269 parts In-Stock

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269

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One Stop Electronics

USA . 256 parts In-Stock

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$2.410

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256

$2.410

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Parana Technologies

USA . 1,552 parts In-Stock

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$6.205

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$6.967

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$6.205

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DigiPath Technology Company

USA . 2,098 parts In-Stock

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$6.833

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$6.833

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ChromeModa Solutions

Germany . 2,746 parts In-Stock

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$6.972

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$5.717

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$6.972

$5.717

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IDEA Electronic Components Group

UK . 2,276 parts In-Stock

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$6.972

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$6.275

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2,276

$6.972

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$6.275

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AZTECH Wire

Italy . 235 parts In-Stock

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$13.579

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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Microchip USA

USA . 2,226 parts In-Stock

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Corphita

USA . 1,974 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Unlock the power of high-quality signal buffering with the TCA4311DGKRG4 by Texas Instruments. Known for their superior manufacturing standards, Texas Instruments offers a top-of-the-line product in the Buffer Amplifier category. This versatile device is perfect for a wide range of applications and delivers unmatched performance. With a nominal supply voltage of 3V and a maximum operating temperature of 85°C, this buffer amplifier is designed to meet the needs of industrial settings. Trust Texas Instruments to provide reliable and durable solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and lightweight, making the product easy to handle and transport.

Maximum Input Offset Voltage: 175000 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in the output.

Surface Mount: YES

Surface mount design allows for easy installation onto circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low supply voltage of 3V helps in reducing power consumption and heat dissipation.

Maximum Supply Voltage Limit: 7 V

With a maximum supply voltage limit of 7V, the product can withstand voltage fluctuations without damage.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85°C ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range from -40°C to 85°C enables the product to be used in a variety of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Terminal finish of Nickel Palladium Gold provides excellent conductivity and corrosion resistance for long-lasting performance.

Amplifier Type: BUFFER

Being a buffer amplifier, this product is designed to drive loads with minimal distortion and signal loss.

Technical Specifications

Buffer Amplifiers TCA4311DGKRG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Input Offset Voltage Limit:

175 mV

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Lowest Output Current:

50 mA

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

TCA4311DGKRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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