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SNJ54LS673J

Texas Instruments

SNJ54LS673J by Texas Instruments

SNJ54LS673J by Texas Instruments is a 16-bit digital shift register with a propagation delay of 40 ns at 5V. It features a MIL-PRF-38535 screening level and operates in military-grade temperature range (-55 to 125 °C). Ideal for applications requiring high-speed data transfer and precise timing control.

Median Price

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Lifecycle Status

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11

In-Stock Inventory

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Vyrian

USA . 6,673 parts In-Stock

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Digiode

USA . 3,438 parts In-Stock

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Inland Empire Components Inc.

USA . 25 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 24 parts In-Stock

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PC Components Company LLC

USA . 23 parts In-Stock

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Bristol Electronics

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ComSIT Distribution GmbH

Germany . 12 parts In-Stock

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LWI Electronics Inc

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Electro Mavin

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DF Sales Co.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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One Stop Electronics

USA . 1,185 parts In-Stock

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AZTECH Wire

Italy . 551 parts In-Stock

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Parana Technologies

USA . 444 parts In-Stock

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DigiPath Technology Company

USA . 157 parts In-Stock

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ChromeModa Solutions

Germany . 3,745 parts In-Stock

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IDEA Electronic Components Group

UK . 1,026 parts In-Stock

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Corphita

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A-Z Elektronik GmbH

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Microchip USA

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Perfect Parts

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Overview

Enhance your digital shift register projects with the high-quality SNJ54LS673J by Texas Instruments. With a MILITARY-grade screening level and TRUE output polarity, this 16-bit shift register offers reliability and precision in data transmission. Ideal for applications requiring fast propagation delay and low power consumption, this Texas Instruments component ensures top-notch performance. Elevate your designs with the trusted brand that delivers value and efficiency to customers.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the internal components, ensuring a long lifespan for the product.

Propagation Delay At Nominal Supply: 40 ns

Low propagation delay ensures fast and efficient operation of the shift register.

No. of Bits: 16

With 16 bits, this shift register can handle a wide range of data processing tasks.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable voltage, making it compatible with many systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various operating environments.

Technology: TTL

TTL technology provides reliable and robust performance for digital signal processing.

Technical Specifications

Digital Shift Registers SNJ54LS673J attributes and parameters. Explore more Digital Shift Registers devices from Texas Instruments

Specs

Additional Features:

PARALLEL OUTPUT IS REGISTERED; ASYNCHRONOUS CLEAR FOR STORAGE REGISTER; COMMON SERIAL I/O PIN

Count Direction:

RIGHT

Family:

LS

JESD-30 Code:

R-CDIP-T24

Length:

32.005 mm

Load Capacitance (CL):

45 pF

Logic IC Type:

Maximum Frequency At Nominal Supply:

20000000 Hz

Maximum I (ol):

24 Amp

No. of Bits:

16

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Supply Current (ICC):

80 mA

Propagation Delay At Nominal Supply:

40 ns

Propagation Delay (tpd):

40 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

4.91 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Type:

NEGATIVE EDGE

Width:

15.24 mm

Minimum fmax:

25 MHz

Trade Compliance

SNJ54LS673J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-122-7302, 5962011227302, 5962-01-122-7633, 5962011227633, 5962-01-248-0234, 5962012480234, 5962-01-306-8893, 5962013068893, 5962-01-236-3218, 5962012363218

NIIN

011227302, 011227633, 012480234, 013068893, 012363218

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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