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SNJ54LS11J

Texas Instruments

SNJ54LS11J by Texas Instruments

SNJ54LS11J by Texas Instruments is a TTL logic gate with 3 functions, 3 inputs, and 20ns propagation delay. It operates at a supply voltage of 5V and can handle a max power supply current of 6.6mA. Ideal for military applications due to MIL-PRF-38535 screening level and ceramic package material.

Median Price

$14.650

Lifecycle Status

Suppliers In-Stock

36

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1k+

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Rochester

USA . 348 parts In-Stock

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$11.720

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$10.490

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$9.870

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DigiKey

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Verical

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$12.338

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TEDSS.com

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Freelance Electronics

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NAC Semi

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Digiode

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American Microsemiconductor Inc.

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DF Sales Co.

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Vyrian

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PC Components Company LLC

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LWI Electronics Inc

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Atlantic Semiconductor

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Electro Mavin

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Ashlea Components Ltd

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Sunrise Surplus Inc.

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ECAB

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Corphita

USA . 4,538 parts In-Stock

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$10.197

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Parana Technologies

USA . 685 parts In-Stock

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$18.336

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DigiPath Technology Company

USA . 2,180 parts In-Stock

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$20.190

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$18.575

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ChromeModa Solutions

Germany . 5,219 parts In-Stock

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IDEA Electronic Components Group

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Advanced Electronics

New Zealand . 300 parts In-Stock

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Overview

Elevate your projects with the SNJ54LS11J by Texas Instruments, a top-quality logic gate that brings unmatched reliability and precision to your designs. With a MILITARY-grade screening level and fast propagation delay of just 20ns, this component is perfect for applications where speed and accuracy are essential. Whether you're working on aerospace systems or industrial automation, the SNJ54LS11J provides the performance and peace of mind you need to succeed. Trust in Texas Instruments for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ensures durability and reliability in harsh environments, making it suitable for military applications.

Propagation Delay at Nominal Supply: 20 ns

Fast propagation delay ensures quick response times, ideal for time-critical operations.

No. of Functions: 3

Versatile chip with multiple functions, offering flexibility in circuit design.

Screening Level: MIL-PRF-38535

Complies with military screening standards, ensuring high quality and reliability.

Nominal Supply Voltage / Vsup: 5V

Compatible with standard 5V power supplies, readily available in most applications.

No. of Inputs: 3

Multiple input options allow for complex logic operations to be performed.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures, suitable for challenging environments.

Technology: TTL

Uses TTL technology known for its high speed and reliability, a popular choice in digital circuit design.

Technical Specifications

Logic Gates SNJ54LS11J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

LG-MAX

Family:

LS

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.94 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

6.6 mA

Propagation Delay At Nominal Supply:

20 ns

Propagation Delay (tpd):

20 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54LS11J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-086-0296, 5962010860296, 5962-01-116-6942, 5962011166942

NIIN

010860296, 011166942

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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