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SNJ54HC112FK

Texas Instruments

SNJ54HC112FK by Texas Instruments

SNJ54HC112FK by Texas Instruments is a CMOS latches & flip-flops chip with 2 functions, 41ns propagation delay at 5V. It operates in military-grade temperature range (-55 to 125 °C) and has a max frequency of 17MHz. Ideal for applications requiring fast data storage and retrieval in harsh environments.

Median Price

$27.574

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Freelance Electronics

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Vyrian

USA . 3,099 parts In-Stock

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Digiode

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Corel Iberica Componentes, S.L.

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Resion

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Distributors (Availability)

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Parana Technologies

USA . 1,307 parts In-Stock

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$17.134

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AZTECH Wire

Italy . 816 parts In-Stock

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DigiPath Technology Company

USA . 335 parts In-Stock

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ChromeModa Solutions

Germany . 1,525 parts In-Stock

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IDEA Electronic Components Group

UK . 81 parts In-Stock

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$18.035

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One Stop Electronics

USA . 1,151 parts In-Stock

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Ampacity Inc.

Singapore . 198 parts In-Stock

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Corphita

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Microchip USA

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Assy Fe

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Overview

Enhance your electronic designs with the SNJ54HC112FK by Texas Instruments, a top-tier manufacturer known for its quality and reliability. This latches & flip-flops category product offers unparalleled value and benefits, making it a must-have for any project requiring efficient signal processing. With a maximum frequency of 17MHz and a low propagation delay of 41ns, this chip carrier package is ideal for military-grade applications where performance and durability are paramount. Experience the advantages of Texas Instruments technology and take your designs to the next level with the SNJ54HC112FK.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and reliability, making the latch & flip-flop suitable for rugged applications.

Propagation Delay At Nominal Supply: 41 ns

Low propagation delay allows for fast switching speeds, making this product suitable for high-speed applications.

No. of Functions: 2

Having 2 functions in one component provides versatility and saves board space in the circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes integration into existing systems easier and more convenient.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for use in a variety of environments without compromising performance.

Technical Specifications

Latches & Flip-Flops SNJ54HC112FK attributes and parameters. Explore more Latches & Flip-Flops devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum Frequency At Nominal Supply:

17000000 Hz

Maximum I (ol):

-4 Amp

No. of Bits:

2

No. of Functions:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.08 mA

Propagation Delay At Nominal Supply:

41 ns

Propagation Delay (tpd):

185 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.03 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trigger Type:

NEGATIVE EDGE

Width:

8.89 mm

Minimum fmax:

20 MHz

Trade Compliance

SNJ54HC112FK Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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