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SNJ54AC00FK

Texas Instruments

SNJ54AC00FK by Texas Instruments

SNJ54AC00FK by Texas Instruments is a CMOS logic gate with 4 functions, 2 inputs, and 11ns propagation delay at 3.3V supply. It operates in military-grade temperatures from -55 to 125°C and is suitable for applications requiring fast signal processing in harsh environments.

Median Price

$17.715

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 62 parts In-Stock

1+ parts

-

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$15.300

1k+ parts

$13.690

10k+ parts

$12.880

62

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$15.300

$13.690

$12.880

DigiKey

USA . 62 parts In-Stock

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-

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$20.130

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62

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$20.130

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Distributors (In-Stock)

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Bristol Electronics

USA . 14 parts In-Stock

1+ parts

$9.750

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$9.750

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Digiode

USA . 1,418 parts In-Stock

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$14.041

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Vyrian

USA . 8,545 parts In-Stock

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DigiKey Marketplace

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Microfarads

USA . 14 parts In-Stock

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LWI Electronics Inc

India . 2 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 62 parts In-Stock

1+ parts

$12.560

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62

$12.560

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Corphita

USA . 3,387 parts In-Stock

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$13.302

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3,387

$13.302

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Parana Technologies

USA . 2,328 parts In-Stock

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$28.362

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$46.606

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2,328

$28.362

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$46.606

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ChromeModa Solutions

Germany . 3,851 parts In-Stock

1+ parts

$31.867

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$26.131

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3,851

$31.867

$26.131

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IDEA Electronic Components Group

UK . 1,543 parts In-Stock

1+ parts

$31.867

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$30.274

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$28.680

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1,543

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$28.680

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Microchip USA

USA . 1,575 parts In-Stock

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DigiPath Technology Company

USA . 1,172 parts In-Stock

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$28.731

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Perfect Parts

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Overview

Elevate your electronic designs with the SNJ54AC00FK by Texas Instruments, a high-quality logic gate that offers unparalleled performance and reliability. Manufactured by industry leader Texas Instruments, this versatile chip carrier is designed for military-grade applications, ensuring maximum durability in extreme conditions. With a fast propagation delay of 11ns and low power consumption, the SNJ54AC00FK is perfect for a wide range of projects where speed and efficiency are essential. Upgrade your circuits today with this top-of-the-line logic gate from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protection for the components inside, ensuring reliability and long-term performance.

Propagation Delay At Nominal Supply: 11 ns

Low propagation delay allows for fast signal processing and response times, making this product suitable for high-speed applications.

Surface Mount: YES

Surface-mount capability makes installation and integration into circuit boards easier and more efficient.

No. of Functions: 4

Having multiple functions in a single package reduces the need for additional components, saving space and simplifying circuit design.

Screening Level: MIL-PRF-38535

Military screening level ensures high quality, reliability, and performance in demanding environments.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with standard 3.3V power supplies, making it easy to integrate into existing systems and circuits.

Load Capacitance (CL): 50 pF

Suitable for driving moderate loads, ensuring stable and accurate signal transmission.

Power Supplies (V): 3.3/5

Supports multiple power supply voltages, offering flexibility in different operating conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making the product energy-efficient and reliable.

Temperature Grade: MILITARY

Designed to operate effectively in a wide range of temperatures, making it suitable for military and aerospace applications.

Technical Specifications

Logic Gates SNJ54AC00FK attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AC

JESD-30 Code:

S-CQCC-N20

JESD-609 Code:

e0

Length:

8.89 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

11 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

2.03 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SNJ54AC00FK Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-463-5338, 5962014635338

NIIN

014635338

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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