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SN74LVC1G98DBVRG4

Texas Instruments

SN74LVC1G98DBVRG4 by Texas Instruments

SN74LVC1G98DBVRG4 by Texas Instruments is a CMOS logic IC with 6.3ns propagation delay, 50pF load capacitance, and 24A max I (ol). It is used in automotive applications due to its Schmitt Trigger feature and operates at temperatures ranging from -40°C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 29,300 parts In-Stock

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Vyrian

USA . 7,741 parts In-Stock

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Digiode

USA . 365 parts In-Stock

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Parana Technologies

USA . 1,357 parts In-Stock

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$9.660

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$897.083

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$8.694

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1,357

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$8.694

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DigiPath Technology Company

USA . 283 parts In-Stock

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$10.637

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283

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ChromeModa Solutions

Germany . 3,468 parts In-Stock

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$10.854

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$8.900

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IDEA Electronic Components Group

UK . 430 parts In-Stock

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$10.854

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$10.311

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$9.769

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430

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$9.769

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AZTECH Wire

Italy . 200 parts In-Stock

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$12.124

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200

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One Stop Electronics

USA . 857 parts In-Stock

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$13.000

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Perfect Parts

USA . 6,477 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unlock the power of cutting-edge technology with the SN74LVC1G98DBVRG4 by Texas Instruments. Crafted with precision and expertise, this Other Function Logic IC offers unparalleled performance and reliability. Ideal for a wide range of applications, this product boasts a compact design and fast propagation delay, ensuring seamless integration into your projects. With a nominal supply voltage of 1.8V and maximum operating temperature of 125°C, the SN74LVC1G98DBVRG4 delivers exceptional quality and efficiency. Elevate your designs and experience the superior value and benefits that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good thermal and mechanical properties, making the product durable and versatile.

Propagation Delay At Nominal Supply: 6.3 ns

Low propagation delay ensures fast processing speed, making this product suitable for applications requiring quick response times.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and simplifying production processes.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V reduces power consumption and can be beneficial for energy-efficient applications.

Output Characteristics: 3-STATE

3-STATE output allows for high impedance state, enabling flexibility in connecting multiple devices without interference, enhancing overall system performance.

Schmitt Trigger: YES

Inclusion of Schmitt Trigger ensures signal conditioning with hysteresis, enhancing noise immunity and signal integrity for reliable operation.

Technology: CMOS

CMOS technology provides low power consumption, high noise immunity, and compatibility with various digital systems, making the product efficient and versatile.

Technical Specifications

Other Function Logic ICs SN74LVC1G98DBVRG4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74LVC1G98DBVRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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