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SN74CBT3257RGYRG4

Texas Instruments

SN74CBT3257RGYRG4 by Texas Instruments

SN74CBT3257RGYRG4 by Texas Instruments is a 4-function multiplexer with 0.25 ns propagation delay at 5V. It features 3-STATE output characteristics, operates in industrial temperature range (-40 to 85 °C), and has a terminal pitch of 0.5 mm. Ideal for applications requiring fast switching and low power consumption.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 5,152 parts In-Stock

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Digiode

USA . 347 parts In-Stock

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AZTECH Wire

Italy . 272 parts In-Stock

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$9.722

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Parana Technologies

USA . 975 parts In-Stock

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$22.406

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$2,080.714

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$20.165

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975

$22.406

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DigiPath Technology Company

USA . 866 parts In-Stock

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$24.672

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$22.698

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ChromeModa Solutions

Germany . 3,651 parts In-Stock

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$25.175

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$20.644

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$25.175

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IDEA Electronic Components Group

UK . 140 parts In-Stock

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$25.175

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$23.916

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$22.658

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One Stop Electronics

USA . 353 parts In-Stock

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$52.000

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A-Z Elektronik GmbH

Germany . 15,449 parts In-Stock

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Microchip USA

USA . 3,709 parts In-Stock

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Perfect Parts

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Corphita

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Kepictronics

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Overview

Unlock the power of seamless data switching with the SN74CBT3257RGYRG4 by Texas Instruments. Designed with precision and reliability in mind, Texas Instruments delivers top-notch quality in the Multiplexer & Demultiplexer category. This versatile chip carrier device offers a swift propagation delay of 0.25 ns, ensuring efficient performance in various industrial applications. With a nominal supply voltage of 5V and a load capacitance of 50 pF, this innovative solution provides customers with unparalleled value and benefits. Experience the advantages of Texas Instruments technology and elevate your projects to new heights with the SN74CBT3257RGYRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer & demultiplexer.

Propagation Delay At Nominal Supply: 0.25 ns

Ensures high-speed data processing, making the product suitable for applications that require quick signal transmission.

Surface Mount: YES

Facilitates easy integration onto circuit boards, saving space and simplifying the assembly process.

No. of Functions: 4

Allows for versatile signal routing and control within a compact device.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage level, ensuring compatibility with most electronic systems.

Load Capacitance (CL): 50 pF

Helps maintain signal integrity by providing the proper capacitive load for the device.

Power Supplies (V): 5

Maintains stable operation with a consistent power source, reducing the risk of voltage fluctuations.

No. of Terminals: 16

Facilitates easy connection to other components or circuits, offering flexibility in system design.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Offers multiple packaging options that cater to various installation requirements and space constraints.

Output Characteristics: 3-STATE

Enables the multiplexer & demultiplexer to drive outputs into a high-impedance state, allowing for seamless interfacing with other components.

Technical Specifications

Multiplexer & Demultiplexer SN74CBT3257RGYRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE MUX/DMUX SWITCH

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Load Capacitance (CL):

50 pF

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16/20,.14X.16,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.003 mA

Propagation Delay At Nominal Supply:

.25 ns

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.5 mm

Trade Compliance

SN74CBT3257RGYRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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