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SN74CBT3257DBQRG4

Texas Instruments

SN74CBT3257DBQRG4 by Texas Instruments

SN74CBT3257DBQRG4 by Texas Instruments is a 4-function multiplexer with 0.25 ns propagation delay, suitable for industrial applications. It operates at a nominal voltage of 5V and has a load capacitance of 50 pF. With surface mount capability and 3-STATE output characteristics, it offers efficient signal routing in compact designs.

Median Price

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Lifecycle Status

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7

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1k+

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Vyrian

USA . 8,743 parts In-Stock

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Digiode

USA . 4,059 parts In-Stock

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UK . 2,305 parts In-Stock

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Microfarads

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Sea View Technologies

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Bristol Electronics

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One Stop Electronics

USA . 1,150 parts In-Stock

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AZTECH Wire

Italy . 853 parts In-Stock

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Parana Technologies

USA . 187 parts In-Stock

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DigiPath Technology Company

USA . 1,950 parts In-Stock

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ChromeModa Solutions

Germany . 2,769 parts In-Stock

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IDEA Electronic Components Group

UK . 1,932 parts In-Stock

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Microchip USA

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Corphita

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Overview

Unlock the power of seamless signal routing with the SN74CBT3257DBQRG4 by Texas Instruments. This versatile multiplexer & demultiplexer boasts top-notch quality and reliability, thanks to its renowned manufacturer. Perfect for a wide range of applications, this product offers unparalleled value with its fast propagation delay, low power consumption, and compact design. With 4 functions in one small package, customers can trust this industrial-grade solution to deliver exceptional performance, making it a must-have for any project requiring precision signal switching.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the multiplexer/demultiplexer, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 0.25 ns

Low propagation delay ensures fast data transmission, making this product suitable for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of electronic systems and power supplies.

Output Characteristics: 3-STATE

3-state outputs provide additional flexibility in controlling the output signal, allowing for tristate enable/disable functionality.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the multiplexer/demultiplexer energy-efficient and reliable in noisy environments.

Technical Specifications

Multiplexer & Demultiplexer SN74CBT3257DBQRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE MUX/DMUX SWITCH

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

4.9 mm

Load Capacitance (CL):

50 pF

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

1

No. of Outputs:

2

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.003 mA

Propagation Delay At Nominal Supply:

.25 ns

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74CBT3257DBQRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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