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SN74CBT3251DBRG4

Texas Instruments

SN74CBT3251DBRG4 by Texas Instruments

SN74CBT3251DBRG4 by Texas Instruments is a 16-terminal CMOS multiplexer with a propagation delay of 0.35 ns. It operates at temperatures ranging from -40 to 85 °C and has 8 outputs with 3-STATE characteristics. Ideal for industrial applications requiring fast signal switching in compact designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,265 parts In-Stock

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Vyrian

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Nova Conductors

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Corohmni

South Africa . 229 parts In-Stock

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$12.383

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AZTECH Wire

Italy . 705 parts In-Stock

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Parana Technologies

USA . 1,754 parts In-Stock

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DigiPath Technology Company

USA . 1,352 parts In-Stock

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IDEA Electronic Components Group

UK . 975 parts In-Stock

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ChromeModa Solutions

Germany . 202 parts In-Stock

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Semicontronic

India . 1,475 parts In-Stock

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One Stop Electronics

USA . 1,467 parts In-Stock

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Ampacity Inc.

Singapore . 543 parts In-Stock

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Corphita

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Argo Parts USA

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Bastille Electronics

Australia . 300 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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Continental Prestige Electronics

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Overview

Unlock the power of seamless data transmission with the SN74CBT3251DBRG4 by Texas Instruments. Designed with precision and reliability in mind, this multiplexer & demultiplexer boasts top-notch quality from a trusted manufacturer. Ideal for a wide range of applications, this versatile component offers unparalleled value and performance. Experience the benefits of smooth signal switching and enhanced functionality with this cutting-edge product. Elevate your projects to new heights with the SN74CBT3251DBRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures consistent and stable performance.

Propagation Delay (tpd): 0.35 ns

With a low propagation delay of 0.35ns, this product allows for fast data transmission.

Output Characteristics: 3-STATE

3-state output allows for high flexibility in controlling the output signals.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial temperature conditions of -40 to 85°C.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Technical Specifications

Multiplexer & Demultiplexer SN74CBT3251DBRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

6.2 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Outputs:

8

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

2 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.3 mm

Trade Compliance

SN74CBT3251DBRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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