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SN65LVP17DRFTG4

Texas Instruments

SN65LVP17DRFTG4 by Texas Instruments

SN65LVP17DRFTG4 by Texas Instruments is a voltage level translator with a max supply voltage of 3.6V and power supplies of 2.5/3.3V, suitable for PECL to LVDS translation applications. It operates in industrial temperature grades from -40°C to 85°C, featuring a small outline package style with dual terminals and nickel palladium gold finish, making it ideal for compact electronic designs requiring fast signal conversion.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,971 parts In-Stock

1+ parts

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7,971

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Digiode

USA . 2,118 parts In-Stock

1+ parts

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2,118

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,861 parts In-Stock

1+ parts

$12.844

100+ parts

-

1k+ parts

$13.321

10k+ parts

-

1,861

$12.844

-

$13.321

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DigiPath Technology Company

USA . 1,518 parts In-Stock

1+ parts

$14.143

100+ parts

$13.012

1k+ parts

-

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1,518

$14.143

$13.012

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ChromeModa Solutions

Germany . 4,369 parts In-Stock

1+ parts

$14.432

100+ parts

$11.834

1k+ parts

-

10k+ parts

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4,369

$14.432

$11.834

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IDEA Electronic Components Group

UK . 393 parts In-Stock

1+ parts

$14.432

100+ parts

$13.710

1k+ parts

$12.989

10k+ parts

-

393

$14.432

$13.710

$12.989

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AZTECH Wire

Italy . 435 parts In-Stock

1+ parts

$15.989

100+ parts

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435

$15.989

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One Stop Electronics

USA . 1,047 parts In-Stock

1+ parts

$22.500

100+ parts

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1,047

$22.500

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Corphita

USA . 2,404 parts In-Stock

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2,404

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Overview

Unleash the power of seamless voltage level translation with the SN65LVP17DRFTG4 by Texas Instruments. Crafted with precision and expertise, this innovative device ensures superior performance and reliability in a wide range of applications. From industrial automation to consumer electronics, this voltage level translator offers unparalleled value, efficiency, and versatility. Elevate your projects to new heights with the cutting-edge technology of Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for a variety of applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 3.6 V

With a high maximum supply voltage, this product can handle a wide range of input voltages, providing flexibility in design.

Minimum Supply Voltage: 2.375 V

The low minimum supply voltage ensures compatibility with a range of low-power devices, increasing the product's versatility.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for reliable performance in various environmental conditions, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the product can function in cold environments, enhancing its usability in a wide range of applications.

Technology: BICMOS

The use of BiCMOS technology combines the benefits of both bipolar and CMOS technologies, offering high-speed operation and low power consumption.

Technical Specifications

Voltage Level Translators SN65LVP17DRFTG4 attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 V SUPPLY

Maximum Delay:

.63 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Other Interface ICs

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.375 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN65LVP17DRFTG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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