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SN55109J

Texas Instruments

SN55109J by Texas Instruments

SN55109J by Texas Instruments is a LINE DRIVER with CERAMIC package, 15 ns max transmit delay, and +-5V power supplies. Ideal for military applications due to its constant-current output, -55 to 125 °C operating temp range, and dual terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,727 parts In-Stock

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Digiode

USA . 2,054 parts In-Stock

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2,054

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Fibra_Brandt Electronic GMBH

Germany . 329 parts In-Stock

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329

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Electronic Expediters

USA . 4 parts In-Stock

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Parana Technologies

USA . 1,337 parts In-Stock

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$2.615

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-

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$3.104

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1,337

$2.615

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$3.104

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DigiPath Technology Company

USA . 1,626 parts In-Stock

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$2.879

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$2.649

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1,626

$2.879

$2.649

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ChromeModa Solutions

Germany . 6,176 parts In-Stock

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$2.938

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$2.409

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6,176

$2.938

$2.409

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IDEA Electronic Components Group

UK . 1,822 parts In-Stock

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$2.938

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$2.644

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1,822

$2.938

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AZTECH Wire

Italy . 627 parts In-Stock

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$17.641

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One Stop Electronics

USA . 137 parts In-Stock

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$36.500

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137

$36.500

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Semicontronic

India . 207 parts In-Stock

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$47.500

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$46.312

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$46.075

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207

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Corphita

USA . 3,175 parts In-Stock

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Supply Digital

USA . 1,271 parts In-Stock

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Overview

Enhance your electronics projects with the Texas Instruments SN55109J line driver & receiver. Crafted by a renowned manufacturer, this ceramic package combines high-quality materials with cutting-edge technology to deliver reliable performance. Ideal for military-grade applications, this IC offers constant-current output characteristics and differential output for seamless signal transmission. With a fast transmit delay of 15 ns and zero receive delay, the SN55109J ensures efficient operation in extreme temperatures. Upgrade your circuit designs with the trusted brand and superior functionality of this versatile component.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic provides excellent thermal conductivity and high mechanical strength, making the product durable and reliable in various environments.

Maximum Transmit Delay: 15 ns

Low transmit delay ensures fast data transmission, making this product suitable for applications requiring quick response times.

Power Supplies (V): +-5

Wide power supply range allows for flexibility in voltage compatibility, making this product versatile and suitable for different systems.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in demanding conditions, making this product ideal for industrial and military applications.

Differential Output: YES

Differential output helps in reducing noise and interference, improving signal quality and reliability in communication systems.

Technology: BIPOLAR

Bipolar technology offers high speed and precision in signal processing, making this product efficient for high-speed data transmission applications.

Technical Specifications

Line Drivers & Receivers SN55109J attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

YES

Driver No. of Bits:

2

Maximum High Level Input Current:

.00004 Amp

Interface IC Type:

JESD-30 Code:

R-XDIP-T14

Nominal Negative Supply Voltage:

-5 V

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

CONSTANT-CURRENT

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

+-5

Qualification:

Not Qualified

Maximum Receive Delay:

0 ns

Sub-Category:

Line Driver or Receivers

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Transmit Delay:

15 ns

Trade Compliance

SN55109J Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-00-481-9366, 5962004819366, 5962-01-025-8632, 5962010258632, 5962-01-277-8708, 5962012778708

NIIN

004819366, 010258632, 012778708

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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