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SN54HC08J

Texas Instruments

SN54HC08J by Texas Instruments

SN54HC08J by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It operates at a supply voltage range of 2-6V, with a propagation delay of 30ns. Ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

$14.340

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Rochester

USA . 6,146 parts In-Stock

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$14.340

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$12.830

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$12.070

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Verical

USA . 6,120 parts In-Stock

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Arrow

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Digiode

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Vyrian

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Sogenti Electronics

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LWI Electronics Inc

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ABC Electronics Ltd.

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Bristol Electronics

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PC Components Company LLC

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Semi Source

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Ashlea Components Ltd

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Resion

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Holdelec - ElecDif-Pro

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Microfarads

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Sinequanon

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Mil-Aero Solutions, Inc.

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Cyclops Electronics Ltd

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GSS - Global Semi Support

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Electronic Expediters

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Manoshevitz Elec. Sales

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ComSIT Distribution GmbH

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Component Sense

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Parana Technologies

USA . 1,404 parts In-Stock

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$8.121

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DigiPath Technology Company

USA . 1,074 parts In-Stock

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$8.227

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ChromeModa Solutions

Germany . 4,451 parts In-Stock

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IDEA Electronic Components Group

UK . 63 parts In-Stock

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Ampacity Inc.

Singapore . 3,935 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 1,164 parts In-Stock

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Lixinc

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Kepictronics

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Microchip USA

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance your electronic projects with the high-quality SN54HC08J Logic Gates by Texas Instruments. Designed with precision and reliability in mind, these logic gates offer unmatched performance and efficiency. Perfect for a wide range of applications, from industrial automation to consumer electronics, this product ensures seamless operation and optimal functionality. Trust Texas Instruments to deliver cutting-edge technology that meets your needs. Upgrade your projects today with the SN54HC08J and experience the superior quality and value that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body provides durability and protection, making the product suitable for rugged environments.

Propagation Delay At Nominal Supply: 30 ns

Low propagation delay ensures quick response times, making the product efficient for time-sensitive applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage allows compatibility with a wide range of electronics and power sources.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can function reliably in challenging thermal conditions.

Technical Specifications

Logic Gates SN54HC08J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

30 ns

Propagation Delay (tpd):

150 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

6.67 mm

Trade Compliance

SN54HC08J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-291-4150, 5962012914150

NIIN

012914150

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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