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SE555JG883B00

Texas Instruments

SE555JG883B00 by Texas Instruments

SE555JG883B00 by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating b/w -55 to 125 °C. It has a supply voltage range of 4.5V to 18V and MIL-STD-883 Class B screening level. Ideal for military applications requiring pulse generation in a compact rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,523 parts In-Stock

1+ parts

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6,523

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Digiode

USA . 3,276 parts In-Stock

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3,276

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 454 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

1k+ parts

$1.455

10k+ parts

-

454

$1.500

$1.462

$1.455

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Ampacity Inc.

Singapore . 218 parts In-Stock

1+ parts

$1.500

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218

$1.500

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Parana Technologies

USA . 788 parts In-Stock

1+ parts

$3.674

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$4.182

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788

$3.674

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$4.182

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DigiPath Technology Company

USA . 1,894 parts In-Stock

1+ parts

$4.045

100+ parts

$3.722

1k+ parts

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1,894

$4.045

$3.722

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ChromeModa Solutions

Germany . 1,844 parts In-Stock

1+ parts

$4.128

100+ parts

$3.385

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1,844

$4.128

$3.385

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IDEA Electronic Components Group

UK . 1,040 parts In-Stock

1+ parts

$4.128

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$3.715

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1,040

$4.128

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$3.715

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One Stop Electronics

USA . 1,361 parts In-Stock

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$4.500

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1,361

$4.500

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AZTECH Wire

Italy . 668 parts In-Stock

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$13.525

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668

$13.525

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Corphita

USA . 3,727 parts In-Stock

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3,727

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Corohmni

South Africa . 430 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the SE555JG883B00 Analog Waveform Generation IC. Perfect for military-grade applications, this high-performance component offers unmatched precision and durability. With a wide range of operating temperatures and supply voltage levels, this IC is versatile and adaptable to various environments. Trust in Texas Instruments for your critical waveform generation needs and unlock endless possibilities for your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the product suitable for harsh environments.

Screening Level: MIL-STD-883 Class B

This indicates high quality and reliability, meeting military standards for performance and durability.

Nominal Supply Voltage (Vsup): 5 V

Stable supply voltage ensures consistent performance of the product.

No. of Terminals: 8

Sufficient terminals for connectivity and flexibility in usage.

Maximum Operating Temperature: 125 °C

Can operate effectively at high temperatures, suitable for challenging environments.

Terminal Finish: TIN LEAD

Provides good conductivity and protects terminals from corrosion.

Width (mm): 7.62 mm

Compact size allows for easy integration into various systems.

Minimum Supply Voltage (Vsup): 4.5 V

Allows for flexibility in power input requirements.

Temperature Grade: MILITARY

Designed to meet stringent military standards for performance and reliability.

Terminal Form: THROUGH-HOLE

Enables secure and stable connection within circuits.

Technical Specifications

Analog Waveform Generation SE555JG883B00 attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Additional Features:

CAN ALSO OPERATE FROM A 15V NOMINAL SUPPLY

Other IC type:

JESD-30 Code:

R-CDIP-T8

JESD-609 Code:

e0

Length:

9.58 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

SE555JG883B00 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-039-7297, 5962010397297

NIIN

010397297

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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