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SE555CDR

Texas Instruments

SE555CDR by Texas Instruments

SE555CDR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating b/w -55 to 125°C. It has a supply voltage range of 4.5V to 16V and comes in a small outline rectangular package suitable for military-grade applications. The IC supports pulse and rectangular waveforms, making it ideal for various signal generation tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,837 parts In-Stock

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3,837

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Digiode

USA . 1,541 parts In-Stock

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1,541

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Distributors (Availability)

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Semicontronic

India . 1,600 parts In-Stock

1+ parts

$0.500

100+ parts

$0.488

1k+ parts

$0.485

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1,600

$0.500

$0.488

$0.485

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One Stop Electronics

USA . 309 parts In-Stock

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$1.500

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309

$1.500

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Ampacity Inc.

Singapore . 303 parts In-Stock

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$1.500

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303

$1.500

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AZTECH Wire

Italy . 886 parts In-Stock

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$7.009

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886

$7.009

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Parana Technologies

USA . 1,054 parts In-Stock

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$18.326

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$18.454

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1,054

$18.326

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$18.454

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DigiPath Technology Company

USA . 1,310 parts In-Stock

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$20.179

100+ parts

$18.565

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1,310

$20.179

$18.565

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ChromeModa Solutions

Germany . 6,641 parts In-Stock

1+ parts

$20.591

100+ parts

$16.885

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6,641

$20.591

$16.885

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IDEA Electronic Components Group

UK . 2,168 parts In-Stock

1+ parts

$20.591

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$19.561

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$18.532

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2,168

$20.591

$19.561

$18.532

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Corphita

USA . 4,377 parts In-Stock

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4,377

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Corohmni

South Africa . 414 parts In-Stock

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414

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Overview

Enhance your analog waveform generation with the SE555CDR by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable and efficient solutions for various applications. The SE555CDR offers customers value by providing precise waveform generation capabilities in a compact package. Whether you're in the military, industrial, or consumer electronics sector, this versatile IC will meet your needs with its wide operating temperature range and dual terminal position. Trust Texas Instruments to deliver top-notch performance and innovation with the SE555CDR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and long-lasting performance of the product.

Surface Mount: YES

Surface mount capability makes the product suitable for compact and space-saving designs.

Nominal Supply Voltage (Vsup): 5 V

Operates efficiently at a standard supply voltage of 5V, compatible with many electronic systems.

Maximum Operating Temperature: 125 °C

Can function reliably at high temperatures, making it suitable for various environments.

Minimum Operating Temperature: -55 °C

Capable of operating in extremely low temperatures, increasing its versatility.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and layout.

Width (mm): 3.9 mm

Compact width allows for efficient space utilization in electronic devices.

Minimum Supply Voltage (Vsup): 4.5 V

Can operate at a low supply voltage, increasing energy efficiency.

Temperature Grade: MILITARY

Military-grade temperature tolerance ensures reliability and performance in harsh conditions.

Terminal Pitch: 1.27 mm

Fine terminal pitch enables precise connections and reduces the risk of short circuits.

Technical Specifications

Analog Waveform Generation SE555CDR attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

SE555CDR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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