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RM48L940ZWTT

Texas Instruments

RM48L940ZWTT by Texas Instruments

Texas Instruments RM48L940ZWTT microcontroller features 32-bit CPU CORTEX-R4F, 262KB RAM, and 3.3V supply voltage. Ideal for industrial applications with ADC and PWM channels, operating temperature range of -40 to 105°C, and flash ROM programmability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,575 parts In-Stock

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Digiode

USA . 1,782 parts In-Stock

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1,782

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Distributors (Availability)

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AZTECH Wire

Italy . 300 parts In-Stock

1+ parts

$15.380

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$15.380

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One Stop Electronics

USA . 201 parts In-Stock

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$35.000

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$35.000

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Parana Technologies

USA . 2,360 parts In-Stock

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$68.398

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DigiPath Technology Company

USA . 1,958 parts In-Stock

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$75.315

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$69.290

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$75.315

$69.290

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ChromeModa Solutions

Germany . 3,002 parts In-Stock

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$76.852

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$63.019

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3,002

$76.852

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IDEA Electronic Components Group

UK . 1,926 parts In-Stock

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$76.852

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$73.009

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$69.167

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1,926

$76.852

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$69.167

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Microchip USA

USA . 4,226 parts In-Stock

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Corphita

USA . 2,906 parts In-Stock

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Overview

Unleash the power of innovation with the RM48L940ZWTT microcontroller by Texas Instruments. Crafted with precision and expertise, this microcontroller offers unparalleled quality and reliability that Texas Instruments is renowned for. Ideal for a wide range of applications, this microcontroller provides seamless performance and efficiency. Experience the value and benefits of cutting-edge technology with the RM48L940ZWTT - delivering exceptional performance, versatility, and innovation to meet all your needs. Elevate your projects to new heights with Texas Instruments' RM48L940ZWTT microcontroller.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components.

Surface Mount: YES

Allows for easy and efficient mounting onto circuit boards.

Maximum Supply Voltage: 1.32 V

Provides stable and reliable power to the microcontroller.

Package Shape: SQUARE

Optimal shape for compact and efficient design layouts.

Bit Size: 32

High bit size allows for complex and advanced processing capabilities.

Power Supplies (V): 1.2,3.3

Supports different power supply options for versatile applications.

No. of Terminals: 337

Offers a wide range of connectivity options for various external devices.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Enables precise and space-saving integration on PCBs.

Minimum Supply Voltage: 1.14 V

Ensures reliable operation even at low voltage levels.

Maximum Operating Temperature: 105 °C

Suitable for industrial applications with high temperature requirements.

CPU Family: CORTEX-R4F

High-performance CPU family for efficient processing tasks.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

Provides corrosion-resistant and reliable terminal connections.

ADC Channels: YES

Supports analog-to-digital conversion for sensor interfacing.

DMA Channels: YES

Enables efficient data transfer without CPU intervention.

Terminal Position: BOTTOM

Facilitates easy and secure soldering on PCBs.

ROM Words: 3145728

Large ROM size for storing program instructions and data.

Maximum Seated Height: 1.4 mm

Low profile design for compact and slim electronic devices.

Width: 16 mm

Compact form factor for space-constrained applications.

Maximum Clock Frequency: 80 MHz

High clock frequency for fast and responsive operation.

Maximum Time At Peak Reflow Temperature (s): 30

Efficient reflow process with optimal time duration.

Peak Reflow Temperature °C: 260

High reflow temperature tolerance for robust soldering.

Length: 16 mm

Symmetrical dimensions for uniform and consistent layout design.

Temperature Grade: INDUSTRIAL

Built to withstand harsh industrial environments and conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture for efficient and streamlined processing tasks.

RAM Bytes: 262144

Large RAM capacity for data storage and manipulation.

Technology: CMOS

Low power consumption and high reliability CMOS technology.

Terminal Form: BALL

Ball terminal form for secure and robust connections.

Nominal Supply Voltage: 1.2 V

Stable and efficient nominal supply voltage for consistent performance.

PWM Channels: YES

Supports pulse-width modulation for precise control and signaling.

ROM Programmability: FLASH

Flash ROM for reprogrammable and flexible memory capabilities.

Terminal Pitch: 0.8 mm

Fine terminal pitch for high-density and compact PCB layouts.

Moisture Sensitivity Level (MSL): 3

Moderate moisture sensitivity level for standard handling precautions.

Speed: 200 rpm

High-speed processing capabilities for efficient data handling.

No. of I/O Lines: 16

Sufficient number of input/output lines for connectivity and interfacing.

Technical Specifications

Microcontrollers RM48L940ZWTT attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

ALSO REQURIES AT 3.3 V I/O SUPPLY

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

16 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

16

No. of Terminals:

337

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

262144

ROM Words:

3145728

ROM Programmability:

FLASH

Maximum Seated Height:

1.4 mm

Speed:

200 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

RM48L940ZWTT Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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