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PINA901HKX/EM

Texas Instruments

PINA901HKX/EM by Texas Instruments

PINA901HKX/EM by Texas Instruments is a ceramic power management IC with 8 terminals in a rectangular flatpack style. It operates at supply voltages from 2.7V to 16V, drawing a max current of 0.019mA. This IC is ideal for power supply support circuits in various electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,558 parts In-Stock

1+ parts

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6,558

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Digiode

USA . 2,607 parts In-Stock

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2,607

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 141 parts In-Stock

1+ parts

$1.500

100+ parts

-

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141

$1.500

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Semicontronic

India . 1,082 parts In-Stock

1+ parts

$3.500

100+ parts

$3.412

1k+ parts

$3.395

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-

1,082

$3.500

$3.412

$3.395

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Parana Technologies

USA . 45 parts In-Stock

1+ parts

$4.405

100+ parts

$409.035

1k+ parts

$3.964

10k+ parts

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45

$4.405

$409.035

$3.964

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DigiPath Technology Company

USA . 1,742 parts In-Stock

1+ parts

$4.850

100+ parts

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1,742

$4.850

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ChromeModa Solutions

Germany . 6,640 parts In-Stock

1+ parts

$4.949

100+ parts

$4.058

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6,640

$4.949

$4.058

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IDEA Electronic Components Group

UK . 319 parts In-Stock

1+ parts

$4.949

100+ parts

-

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$4.454

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319

$4.949

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$4.454

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Ampacity Inc.

Singapore . 277 parts In-Stock

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$7.500

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277

$7.500

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AZTECH Wire

Italy . 219 parts In-Stock

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$17.099

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219

$17.099

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Corphita

USA . 3,779 parts In-Stock

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3,779

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Corohmni

South Africa . 106 parts In-Stock

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106

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Overview

Enhance your power management capabilities with the PINA901HKX/EM by Texas Instruments. Crafted from high-quality ceramic material, this flatpack IC offers superior performance and reliability. Ideal for power supply support circuits, this rectangular package boasts a dual terminal position for seamless integration. With a maximum supply voltage of 16V and minimum of 2.7V, this IC provides efficiency and precision in a compact form factor. Trust Texas Instruments to deliver cutting-edge solutions that meet your power management needs with the PINA901HKX/EM.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package material provides excellent thermal conductivity and stability, ensuring reliable performance even in high temperature environments.

Surface Mount: YES

Surface mount packaging offers space-saving benefits and improved electrical performance, making it suitable for modern compact electronic designs.

No. of Terminals: 8

Having 8 terminals allows for multiple input and output connections, offering flexibility in power management configurations.

Package Style (Meter): FLATPACK

Flatpack package style provides a low profile design, making it ideal for applications where height constraints are a concern.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage requirement makes this power management IC suitable for a wide range of power sources, including batteries and low voltage power supplies.

Maximum Supply Current (Isup): 0.019 mA

With a low maximum supply current, this IC offers energy efficiency and helps in reducing power consumption in the system.

Terminal Pitch: 1.27 mm

The tight terminal pitch allows for compact board layouts, enabling high-density designs and efficient use of circuit board space.

Maximum Supply Voltage (Vsup): 16 V

The high maximum supply voltage rating provides versatility in the choice of power sources, making this IC suitable for a wide range of applications.

Technical Specifications

Power Management ICs PINA901HKX/EM attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-CDFP-F8

Length:

6.485 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Package Body Material:

CERAMIC

Package Code:

DFP

Package Equivalence Code:

FL8,.25

Package Shape:

Package Style (Meter):

FLATPACK

Maximum Seated Height:

2.785 mm

Maximum Supply Current (Isup):

.019 mA

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

6.475 mm

Trade Compliance

PINA901HKX/EM Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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