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LMX2525LQX1321

Texas Instruments

LMX2525LQX1321 by Texas Instruments

LMX2525LQX1321 by Texas Instruments is a PLL frequency synthesizer with 24 terminals, operating voltage of 2.5-3.3V, and package style of chip carrier. It has a max supply current of 16.8mA, operates in temperatures from -30 to 85°C, and is suitable for phase-locked loops and frequency synthesis circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,381 parts In-Stock

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2,381

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Digiode

USA . 850 parts In-Stock

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850

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Anansix

USA . 494 parts In-Stock

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494

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Distributors (Availability)

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One Stop Electronics

USA . 1,123 parts In-Stock

1+ parts

$3.500

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1,123

$3.500

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AZTECH Wire

Italy . 235 parts In-Stock

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$17.453

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235

$17.453

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Parana Technologies

USA . 226 parts In-Stock

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$21.419

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$21.770

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226

$21.419

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$21.770

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ChromeModa Solutions

Germany . 4,522 parts In-Stock

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$24.066

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$19.734

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4,522

$24.066

$19.734

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IDEA Electronic Components Group

UK . 2,225 parts In-Stock

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$24.066

100+ parts

$22.863

1k+ parts

$21.659

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2,225

$24.066

$22.863

$21.659

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Corphita

USA . 5,291 parts In-Stock

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DigiPath Technology Company

USA . 477 parts In-Stock

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$21.698

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477

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$21.698

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Overview

Unlock unparalleled precision and performance with the LMX2525LQX1321 by Texas Instruments. This cutting-edge Phase Locked Loop (PLL) & Frequency Synthesis Circuit promises top-tier quality and reliability, thanks to its trusted manufacturer. Ideal for a wide range of applications, this surface mount chip carrier boasts a very thin profile, ensuring seamless integration into your projects. Experience the superior value and benefits of this innovative product, delivering unmatched accuracy and efficiency to meet all your frequency synthesis needs. Elevate your designs with the LMX2525LQX1321 today.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation on PCB, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 2.8 V

Optimal voltage level for efficient performance and power consumption.

Terminal Finish: TIN LEAD

Provides reliable connections and good solderability, ensuring robust operation.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, suitable for a variety of applications.

Minimum Operating Temperature: -30 °C

Can also operate in low-temperature conditions, making it versatile for different environments.

Width (mm): 4 mm

Compact size allows for integration into tight spaces.

Maximum Supply Current (Isup): 16.8 mA

Low power consumption for energy-efficient operation.

Moisture Sensitivity Level (MSL): 2

Resistant to moisture damage, ensuring long-term reliability.

Maximum Supply Voltage (Vsup): 3.3 V

Offers flexibility in power supply options without risking damage to the device.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits LMX2525LQX1321 attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-XQCC-N24

JESD-609 Code:

e0

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC24,.16X.2,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

2.8

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

16.8 mA

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

2.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4 mm

Trade Compliance

LMX2525LQX1321 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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