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LMG3410RWHT

Texas Instruments

LMG3410RWHT by Texas Instruments

LMG3410RWHT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. With a 480V DS Breakdown Voltage, it operates in DEPLETION MODE with 32A IDM. Utilizing GALLIUM NITRIDE technology, it can handle up to 12A ID at temperatures ranging from -40°C to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,458 parts In-Stock

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3,458

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Digiode

USA . 3,335 parts In-Stock

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3,335

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 457 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

$1.580

10k+ parts

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457

$0.387

-

$1.580

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DigiPath Technology Company

USA . 1,370 parts In-Stock

1+ parts

$0.426

100+ parts

$0.392

1k+ parts

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1,370

$0.426

$0.392

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ChromeModa Solutions

Germany . 2,113 parts In-Stock

1+ parts

$0.435

100+ parts

$0.357

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2,113

$0.435

$0.357

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IDEA Electronic Components Group

UK . 459 parts In-Stock

1+ parts

$0.435

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$0.392

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459

$0.435

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$0.392

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Ampacity Inc.

Singapore . 351 parts In-Stock

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$2.050

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351

$2.050

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AZTECH Wire

Italy . 877 parts In-Stock

1+ parts

$9.319

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877

$9.319

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Semicontronic

India . 1,226 parts In-Stock

1+ parts

$23.050

100+ parts

$22.474

1k+ parts

$22.358

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1,226

$23.050

$22.474

$22.358

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One Stop Electronics

USA . 1,420 parts In-Stock

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$42.050

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1,420

$42.050

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Corphita

USA . 4,093 parts In-Stock

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4,093

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Corohmni

South Africa . 169 parts In-Stock

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Overview

Elevate your power management solutions with the LMG3410RWHT by Texas Instruments. Crafted with precision and expertise, this N-channel Power FET is designed for switching applications, boasting a minimum DS breakdown voltage of 480V and a maximum pulsed drain current of 32A. Whether you're in the automotive industry, industrial sector, or beyond, this FET offers unparalleled performance and reliability. Experience the benefits of gallium nitride technology and enhance your projects with efficiency and innovation. Choose Texas Instruments for superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON resistance and higher current carrying capability compared to P-Channel FETs, making it a good choice for high power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in switching circuits.

Minimum DS Breakdown Voltage: 480 V

The high minimum breakdown voltage allows for handling higher voltages, making it suitable for high voltage applications.

Surface Mount: YES

Surface mount design allows for easy PCB assembly and space-saving, making it ideal for compact electronic devices.

Maximum Pulsed Drain Current (IDM): 32 A

High maximum pulsed drain current capability enables the FET to handle sudden current spikes effectively.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers low ON resistance, high switching speed, and low power consumption, making it an efficient choice for power applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the FET can withstand elevated temperatures without performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the FET to operate in harsh environments and extreme temperatures.

Maximum Drain Current (ID): 12 A

Capable of handling a maximum drain current of 12A, making it suitable for applications requiring high current levels.

Technical Specifications

Power Field Effect Transistors (FET) LMG3410RWHT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

480 V

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PQCC-N32

No. of Terminals:

32

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

32 A

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM NITRIDE

Trade Compliance

LMG3410RWHT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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