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LMG3425R050RQZR

Texas Instruments

LMG3425R050RQZR by Texas Instruments

LMG3425R050RQZR by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features a 600V DS Breakdown Voltage, 44A Drain Current, and 0.055 ohm On Resistance. Utilizes GALLIUM NITRIDE technology with -40 to 125 °C operating temperature range.

Median Price

$19.811

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 6,251 parts In-Stock

1+ parts

$16.152

100+ parts

$14.109

1k+ parts

$9.730

10k+ parts

-

6,251

$16.152

$14.109

$9.730

-

Mouser Electronics

USA . 2,000 parts In-Stock

1+ parts

$23.470

100+ parts

$16.020

1k+ parts

$13.220

10k+ parts

$13.190

2,000

$23.470

$16.020

$13.220

$13.190

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 724 parts In-Stock

1+ parts

$12.180

100+ parts

-

1k+ parts

-

10k+ parts

-

724

$12.180

-

-

-

Digiode

USA . 2,940 parts In-Stock

1+ parts

$15.344

100+ parts

-

1k+ parts

-

10k+ parts

-

2,940

$15.344

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,923 parts In-Stock

1+ parts

$1.058

100+ parts

-

1k+ parts

$1.915

10k+ parts

-

1,923

$1.058

-

$1.915

-

DigiPath Technology Company

USA . 1,922 parts In-Stock

1+ parts

$1.165

100+ parts

$1.072

1k+ parts

-

10k+ parts

-

1,922

$1.165

$1.072

-

-

ChromeModa Solutions

Germany . 1,465 parts In-Stock

1+ parts

$1.189

100+ parts

$0.975

1k+ parts

-

10k+ parts

-

1,465

$1.189

$0.975

-

-

IDEA Electronic Components Group

UK . 197 parts In-Stock

1+ parts

$1.189

100+ parts

-

1k+ parts

$1.070

10k+ parts

-

197

$1.189

-

$1.070

-

Semicontronic

India . 4,054 parts In-Stock

1+ parts

$10.350

100+ parts

$10.091

1k+ parts

$10.040

10k+ parts

-

4,054

$10.350

$10.091

$10.040

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Ampacity Inc.

Singapore . 3,777 parts In-Stock

1+ parts

$10.350

100+ parts

-

1k+ parts

-

10k+ parts

-

3,777

$10.350

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-

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Corohmni

South Africa . 191 parts In-Stock

1+ parts

$12.180

100+ parts

-

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10k+ parts

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191

$12.180

-

-

-

Corphita

USA . 1,865 parts In-Stock

1+ parts

$14.537

100+ parts

-

1k+ parts

-

10k+ parts

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1,865

$14.537

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-

-

Microchip USA

USA . 3,547 parts In-Stock

1+ parts

$36.230

100+ parts

$35.720

1k+ parts

$35.460

10k+ parts

$35.200

3,547

$36.230

$35.720

$35.460

$35.200

Overview

Experience the superior quality and performance of the LMG3425R050RQZR by Texas Instruments, a leading manufacturer in the industry. As a powerful Power Field Effect Transistor (FET), this product offers unmatched reliability and efficiency in switching applications. With its N-CHANNEL polarity and COMPLEX configuration, customers can trust in the seamless operation of their systems. Whether you need to enhance your device's functionality or improve its overall performance, this FET provides a cost-effective solution that delivers maximum value. Trust Texas Instruments to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the Power FET, ensuring its longevity.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher efficiency compared to P-channel FETs, making them a preferred choice for many applications.

Configuration: COMPLEX

The complex configuration allows for versatile usage in a variety of switching applications, offering flexibility to the user.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and reliability in such scenarios.

Minimum DS Breakdown Voltage: 600 V

The high breakdown voltage allows for the FET to handle high voltage levels, making it suitable for a wide range of applications.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and facilitating automated assembly processes.

Maximum Drain Current (Abs) (ID): 44 A

The high maximum drain current rating allows the FET to handle high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.055 ohm

Low on-resistance minimizes power losses and improves efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) LMG3425R050RQZR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

44 A

Maximum Drain-Source On Resistance:

.055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PQCC-N54

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

54

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

GALLIUM NITRIDE

Maximum Turn Off Time (toff):

86 ns

Maximum Turn On Time (ton):

56 ns

Trade Compliance

LMG3425R050RQZR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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