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LMC555CTPX

Texas Instruments

LMC555CTPX by Texas Instruments

LMC555CTPX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating at -40 to 85 °C. It has a supply voltage range of 1.5V to 12V and can output frequencies up to 3 GHz. This CMOS technology IC in a rectangular package is ideal for pulse applications in industrial settings.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,875 parts In-Stock

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8,875

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Anansix

USA . 2,636 parts In-Stock

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2,636

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Digiode

USA . 1,366 parts In-Stock

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1,366

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Prism Electronics

USA . 138 parts In-Stock

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138

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 312 parts In-Stock

1+ parts

$6.500

100+ parts

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312

$6.500

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Parana Technologies

USA . 2,139 parts In-Stock

1+ parts

$13.341

100+ parts

-

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$13.854

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2,139

$13.341

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$13.854

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DigiPath Technology Company

USA . 15 parts In-Stock

1+ parts

$14.690

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$13.515

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15

$14.690

$13.515

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IDEA Electronic Components Group

UK . 921 parts In-Stock

1+ parts

$14.990

100+ parts

$14.240

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$13.491

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921

$14.990

$14.240

$13.491

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ChromeModa Solutions

Germany . 744 parts In-Stock

1+ parts

$14.990

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$12.292

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744

$14.990

$12.292

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AZTECH Wire

Italy . 407 parts In-Stock

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$17.257

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407

$17.257

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Corphita

USA . 1,972 parts In-Stock

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1,972

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Overview

Experience the unparalleled quality and precision of Texas Instruments with the LMC555CTPX, a cutting-edge analog waveform generation component. Perfect for a wide range of applications, this product offers exceptional value and benefits to customers looking for reliable performance and versatility. Trust in Texas Instruments' reputation for excellence as you explore the endless advantages that the LMC555CTPX brings to your projects. Elevate your designs with this top-of-the-line solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the product, making it a reliable choice for long-term use.

Nominal Supply Voltage (Vsup): 5 V

Operating at a nominal supply voltage of 5V allows for compatibility with a wide range of power sources, making it versatile for various applications.

Maximum Output Frequency: 3 GHz

The high maximum output frequency of 3 GHz enables this product to generate precise and high-frequency analog waveforms, meeting the requirements of demanding applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can perform reliably even in challenging environmental conditions, ensuring consistent functionality.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Technical Specifications

Analog Waveform Generation LMC555CTPX attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PBGA-B8

Length:

1.412 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Frequency:

3 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

12 V

Minimum Supply Voltage (Vsup):

1.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width (mm):

1.387 mm

Trade Compliance

LMC555CTPX Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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